NXP introduces new top cooling package technology for RF power devices

     NXP Semiconductor announced the launch of a family of top-cooled RF amplifier modules that incorporate innovative packaging technology to help create thinner wireless products for 5G infrastructure. Smaller base stations can improve the convenience and economics of installation, while being more decentralized into the environment. NXP's GaN multi-chip module family, combined with the new RF power device top cooling solution, not only helps reduce the thickness and weight of radio products by more than 20%, but also reduces the carbon footprint of 5G base station manufacturing and deployment.

     Pierre Piel, vice president and general manager of NXP's RF Power Business unit, said: "Top cooling technology presents a significant opportunity for the wireless infrastructure industry, allowing us to combine high power capabilities with excellent thermal performance to create smaller RF subsystems. A solution based on this innovative technology allows us to deploy more environmentally friendly base stations while maintaining the network density needed to realize the full performance benefits of 5G."

     NXP's new top-cooled devices offer significant design and manufacturing benefits, such as the need for dedicated RF shielding, the ability to use cost-effective, streamlined printed circuit boards, and the separation of thermal management and RF design. These features help network solution providers build thinner 5G wireless products for mobile network operators, while reducing the overall product design cycle.

     NXP's first family of top-cooled RF power modules is designed for 32T32R, 200W RF and covers the 3.3GHz to 3.8GHz frequency range. Using a combination of NXP's proprietary LDMOS and GaN semiconductor technologies, the device combines high gain, high efficiency and broadband performance, providing 31 dB gain and 46 percent efficiency at 400MHz instantaneous bandwidth.