Navitas Semiconductor launched the world's first intelligent GaNFast GaN power chip, and GaNSense's new technology was introduced

     The industry leader of GaN power chips, Navitas Semiconductor, announced the launch of a new generation of intelligent GaN Fast power chips using GaNSense technology. GaNSense technology integrates key, real-time and intelligent sensing and protection circuits, further improving the leading reliability and robustness of nano micro semiconductor in the power semiconductor industry, and increasing the energy saving and fast charging advantages of nano micro GaN power chip technology.

     Gallium nitride (GaN) is the next generation semiconductor material. The switching speed of GaN devices is 20 times faster than that of traditional silicon devices. With the size and weight halved, it can achieve up to 3 times the power and 3 times the charging speed. GaNFast of Nanosemiconductor ™ GaN power chip integrates GaN devices and driving, protection and control functions, providing simple, small, fast and efficient performance.

     GaNSense technology integrates real-time, accurate, and fast sensing of system parameters, including current and temperature sensing. The technology enables a patent-pending non-destructive, power-hungry flu response. The GaNSense technology provides an additional 10 percent more energy savings than previous generations, and can further reduce the number of external components and the size of the system. In addition, if the GAN power chip identifies a potential system hazard, the chip will quickly transition to a cycle-by-cycle shutdown to protect the device and surrounding systems. GaNSense technology also incorporates intelligent standby power reduction, which automatically reduces standby power consumption when the GAN power chip is in idle mode, helping to further reduce power consumption. This is especially important for the growing number of customers who are actively pursuing environmental protection.

     With the industry's most stringent current measurement accuracy and GaNFast response time, GaNSense technology reduces danger time by 50% and dangerous overcurrent peak by 50%. GaNFast GAN power chip monolithic integration provides reliable, fault-free operation with no "ringing", thereby improving system reliability.

     "From detection to protection in 30 nanoseconds, the GaNSense technology is 600% faster than the implementation of a vertical gallium nitride power chip," said Dan Kinzer, co-founder and COO/CTO of Nano Semiconductor. Nanomicrosemiconductor's next-generation GaNFast gallium nitride power chip products using GaNSense technology provide highly accurate and effective protection against potential system failure modes. Coupled with immunity to transient voltages of up to 800V and rigorous gate waveform control and voltage regulation, these capabilities are only possible with our proprietary process design suite, redefining a new standard for reliability, robustness and performance in power semiconductors."

     The new generation GaNFast GAN power chip comes in ten models using GaNSense technology, all of which integrate the core technologies of GAN power devices, GAN drive, control and protection. All products are rated at 650V/800V and have 2kV ESD protection. The new GaNFast power chip has an RDS(ON) range of 120 to 450 milliohm and comes in a 5 x 6 mm or 6 x 8 mm PQFN package with GaNSense protection circuits and lossless current sensing. As the third generation of gallium nitride, micro power chip, in view of the modern power converter topology structure is optimized, including high frequency quasi resonant flyback type (HFQR), active clamp flyback type (ACF) and boost PFC, these are all popular mobile and consumer market to provide the fastest, most efficient and technical method of the smallest charger and adapter.

     Target markets include fast charging appliances for smartphones and laptops, with an estimated US $2 billion annual gallium nitride market opportunity, and a US $2 billion annual consumer market opportunity, including all-in-one machines, televisions, home networking, and automation devices. GaNSense technology is already used in gallium nitride chargers for some top-tier consumer electronics brands.

     To date, more than 30 million Nanomicro-GanFast GaN power chips have been shipped, more than 116 billion device hours have been realized in field testing, and there have been no reports of GAN field failures. Each GaNFast gallium nitride power chip shipped can reduce the carbon footprint by 4-10 times and save 4kg of carbon dioxide emissions compared to conventional silicon power chips.