Navitas announces the world's first 8.5kW AI data center power supply powered by GaN and SiC

     Navitas Semiconductor has introduced the world's first 8.5 kW power unit (PSU) for next-generation artificial intelligence and hyperscale data centers. The PSU is powered by GaN and SiC technologies and achieves 98% efficiency.

     The 54V output power module is optimized by artificial intelligence to comply with the OCP (Open Compute Project) and ORv3 (Open Rack v3) specifications. Equipped with high-power GaNSafe and Gen-3 Fast SiC MOSFETs, it is configured in a three-phase staggered PFC and LLC topology to guarantee maximum efficiency and performance with the lowest number of components.

     The industry's lowest transient currents and EMI are achieved by transitioning from a PSU to a 3-phase topology for PFC and LLC, as opposed to the 2-phase topology adopted by competing Psus. In addition, the PSU reduces the total cost by 25 percent compared to the closest competing systems by reducing the number of GaN and SiC devices. The standby output voltage is 12v, the input voltage ranges from 180 to 264vac, and the operating temperature ranges from -5oC to 45oC. It has a hold time of 10 ms at 8.5 kW and can be achieved with an extender of 20 ms.

     Designed for demanding high-power applications such as AI data centers and industrial markets, the High-power GaNSafe supports a three-phase LLC topology. The fourth generation of Navitas integrates control, propulsion, sensing and critical protection functions to provide unmatched robustness and reliability.

     GaNSafe is the safest GaN in the world, with short circuit protection (maximum delay 350ns), 2kV ESD protection on all pins, elimination of negative gate drive, programmable voltage swing rate control. The package can be viewed as a discrete GaN FET because all of these characteristics are controlled with 4 pins, eliminating the need for VCC pins. The 650v GaNSafe is available in TOLL and TOLT configurations for applications ranging from 1kw to 22kw. RDS(ON)MAX The value ranges from 25 to 98 mΩ.

     3 Phase interlace CCM TP-PFC is enabled by Gen-3 Fast SiC MOSFETs with "trench auxiliary plane" technology, developed after more than 20 years of SiC innovation leadership. The technology delivers world-leading temperature performance, including cold operation, fast switching and superior robustness to support faster-charging electric vehicles and up to 3 times more powerful artificial intelligence data centers.