New Energy Efficient and Precision Smart Power Modules from Vishay Support Next-Generation Microprocessors

     Vishay Intertechnology, Inc has introduced nine new 70 A, 80 A and 100 A VRPower smart power modules with integrated current and temperature monitoring in a thermally enhanced 5 mm x 6 mm PowerPAK MLP56-39 package. Vishay Siliconix's SiC8xx family of smart power modules improves energy efficiency and current reporting accuracy, reducing energy costs for data center and other high-performance computing, and 5G mobile infrastructure communications applications.

     The recently released power modules contain power MOSFETs and advanced driver ICs. To improve energy efficiency, the device's internal MOSFETs use advanced TrenchFET Gen IV technology, which sets the industry benchmark for performance and significantly reduces switching and conduction losses. The peak energy efficiency of SiC8xx intelligent power modules can reach more than 93% under various application conditions. Diode emulation mode can be enabled at light loads to improve efficiency over the full load range.

     A solution that uses an inductor DCR to monitor power consumption reports current with an accuracy of 7 %, while the SiC8xx family of devices uses a low-side MOSFET for detection with an accuracy error of less than 3 %. This helps improve the performance and thermal management of high-current processors and systems-on-chips (SoCs) from companies such as Intel, Advanced Micro Devices, Inc., and Nvidia Corporation. The devices are suitable for synchronous buck converters, multiphase VRDs for CPUs and GPUs, memory, and DC/DC VR modules.

     The SiC8xx power modules have input voltages from 4.5 V to 21 V and switch frequencies up to 2 MHz. Fault protection features include high-side MOSFET short-circuit and overcurrent alarms, thermal protection, and undervoltage lockout (UVLO). The SiC8xx series supports 3.3 V and 5 V tri-state PWM logic levels and is compatible with various PWM controllers.