New LPSRAM with embedded error correction code and improved reliability

     Alliance Memory has expanded its LPSRAM product portfolio and introduced new 1Mb and 4Mb devices to provide ECC. Compared with the previous generation of devices, the new AS6CE1016A (1Mb) and AS6CE4016B (4Mb) provide better fault timeliness and MTTF characteristics, reduce the soft error rate, and achieve more reliable operation in various consumer, communication, industrial and medical applications.

     The ECC feature of the new lpsram provides error correction of 1 bit per byte, making it particularly suitable for low power consumption and battery backup non-volatile memory applications. The data retention voltage of these devices is 1.5V, the typical data retention current of 1Mb AS6CE1016A is 1 µ a, and the typical data retention current of 4Mb AS6CE4016B is 2 µ a. The device uses a single power supply of 2.7V to 3.6V, and all inputs and outputs are fully TTL compatible.

     With the enhancement of performance, the new lpsram can meet the needs of a wide range of applications, such as routers and switches in communication systems; PLC printers, musical instruments, game consoles and calculators in industrial automation systems; Vending machines and automatic teller machines; There are also control panels, elevator systems and fire protection systems.