New common drain double N-channel 60V MOSFETs for improved power density and efficiency

     Vishay Intertechnology has announced the launch of a new common drain double N-channel 60 V MOSFET-SISF20DN in a compact, heat-enhanced PowerPAK 1212-8SCD package. The Vishay Siliconix SiSF20DN is the industry's lowest RS-S(ON) 60 V common drain device specifically designed to improve the power density and efficiency of battery management systems, in-line and wireless chargers, DC/DC converters, and power supplies.

     SiSF20DN is 100% Rg and UIS tested, RoHS compliant and halogen-free. With RS-S(ON) typical values as low as 10 m at 10V, the two-chip MOSFETs are the lowest 60 V device with on-resistance in a 3mm x 3mm package, 42.5% lower than the next best product in this package size and 89% lower than Vishay's previous generation devices.

     Thus, the voltage drop of the power channel is reduced, the power consumption is reduced, and the efficiency is improved. For increased power density, the SiSF20DN's RS1S2(ON) area product is 46.6% lower than the second-ranked alternative MOSFET, even including the larger package solution of 6 mm x 5 mm.

     To save PCB space, reduce the number of components and simplify the design, the device features an optimized package structure with two single-chip integrated TrenchFET fourth-generation N-channel MOSFETs in a common drain configuration. The SiSF20DN source contacts are arranged side by side, increasing the connection and increasing the PCB contact area, further reducing the resistivity compared with traditional dual-package devices. This design makes MOSFETs suitable for use in 24V systems and bidirectional switches for industrial applications including factory automation, power tools, drones, motor drives, white goods, robotics, security/surveillance and smoke alarms.