New symmetrical dual-channel MosFEts from Vishay

     Vishay Intertechnology has announced the launch of two new 30 V symmetrical dual-channel N-channel power MosFETs --SiZF5300DT and SiZF5302DT. Combination of high-edge and low-edge TrenchFET Gen V MOSFET in a 3.3mm x 3.3mm PowerPAIR 3x3FS monomer package. Vishay Siliconix SiZF5300DT and SiZF5302DT are suitable for power conversion in computing and communication applications, reducing component count and simplifying design while improving energy efficiency.

     The dual-channel MOSFeTs can be used to replace two PowerPAK 1212 packaged discrete devices, saving 50% substrate space and 63% less space occupancy than the PowerPAIR 6x5F dual-chip MosFeTs. MOSFET provides space saving solutions for USB-C powered laptops, servers, DC cooling fans, and communications device synchronous step-down converters, point-of-load (POL) conversion circuits, and DC/DC module designers. In these applications, the SiZF5302DT high-low edge MosFeTs provide superior results with 50% duty cycle and excellent energy efficiency, especially at 1 A to 4 A current conditions. SiZF5300DT is an ideal solution for 12 A to 15 A heavy loads.

     The SiZF5300DT and SiZF5302DT utilize Vishay's 30 V Gen V technology to achieve excellent on-resistance and gate charge. The typical on-resistance of SiZF5300DT at 10 V and 4.5V was 2.02 m and 2.93 m, respectively, and the on-resistance of SiZF5302DT at the same condition was 2.7m and 4.4m, respectively. Typical gate charges for the 4.5V mosFeTs are 9.5 nC and 6.7 nC, respectively. The ultra-low on-resistance product of gate charge, the MOSFET power conversion application important Value factor (FOM), is 35 percent lower than previous solutions with similar on-resistance. High frequency switch application efficiency increased by 2%, 100 W energy efficiency reached 98%.