Nexperia Releases Wafer Level 12 and 30V MOSFETs with Market Leading Efficiency

     Nexperia announced the launch of PMCB60XN and PMCB60XNE 30V N-channel small signal Trench MOSFET. The product is packaged with ultra compact wafer level DSN1006, and has market leading RDS (on) characteristics. It can make the power more durable in the case of limited space and critical battery life.The new MOSFET is very suitable for highly miniaturized electronic products such as smart phones, smart watches, hearing aids and earphones. It caters to the trend of more intelligence and richer functions, and meets the demand of increasing system power consumption.

     The performance of RDS (on) is improved by 25% compared with competitive devices, which can minimize energy consumption and improve the efficiency of load switch and battery management. Its outstanding performance is also shown in the reduction of self heating, thus enhancing the user comfort of wearable devices.

     Specifically, when VGS=4.5V, the maximum RDS (on) of PMCB60XN and PMCB60XNE are 50m Ω and 55m Ω respectively. Therefore, among similar 30V MOSFETs in the market, PMCB60XN and PMCB60XNE have the lowest single chip area on resistance. In addition, PMCB60XNE is integrated into 1.0mm × 0.6mm × In the small form factor of 0.2mm DSN1006, rated 2kV ESD protection (manikin – HBM) can also be provided. The rated drain current of both MOSFETs can reach up to 4A.

     In addition to the two MOSFETs packaged with DSN1006, Nexperia also introduced a 12V N-channel Trench MOSFET PMCA14UN packaged with DSN1010. When VGS=4.5 V, the maximum RDS (on) of PMCA14UN is 16m Ω and 0.96mm × 0.96mm × 0.24mm (SOT8007) can have market leading efficiency.