Nexperia and United Automotive Electronics Co., Ltd. entered into an in-depth cooperation in the field of gallium nitride

     Nexperia, an expert in the field of basic semiconductor devices, announced an in-depth cooperation with United Automotive Electronics Co., LTD. (UAES), a major supplier to the domestic automotive industry, in the field of power semiconductor gallium nitride (GaN), aiming to meet the increasing technical demand for new energy vehicle power systems in the future. We are committed to promoting the development and application of GaN process technology in the Chinese automotive market.

     With the continuous growth of automotive electrification, 5G communications, and Industry 4.0 markets, mainstream GaN based designs are becoming better and better, which is bound to drive the demand growth of power semiconductors in 2021 and beyond. NexperiaGaN FET Products has collaborated with UAES on on-board chargers for electric vehicles and high-voltage DC-DC converters. The Nexperia gallium nitride process technology is based on proven and reliable mass production processes with very low switching factor of quality (RDS(on) x QGD) and reverse recovery charge (Qrr) supporting high switching frequencies while providing lower power consumption and more efficient power conversion. Nexperia's globally owned production facilities allow us to deliver products to the market that are truly compliant with the vehicle specification class AEC-Q101.

     United Automotive Electronics Co., Ltd. provides customers with advanced and complete automotive powertrain and body control system solutions, engaged in the development, production and sales of gasoline engine management systems, transmission control systems, body electronics, hybrid and electric drive control systems. Its five technical centers located in Shanghai, Chongqing, Wuhu, Liuzhou and Suzhou have the world's advanced level of vehicle, engine, automatic transmission, electric drive performance development laboratories, and its advanced equipment can effectively provide high-quality system development, parts development, calibration and other engineering services for domestic automobile manufacturers.

     Nexperia executives said: "New energy automotive power systems are expected to dominate the growing market demand for semiconductor devices in the future, and the power density and efficiency of silica-based gallium nitride field effect transistors will play a key role in automotive electrification applications." We recognize the broad product line, industry position and customer base of United Automotive Electronics Co., Ltd. in the automotive industry, and believe that our in-depth cooperation in the field of gallium nitride will enable the two companies to provide customers with more advanced and efficient new energy vehicle power system solutions.

     Early last month, we announced increased global production and increased R&D spending to fully support new product development, including the recent opening of a new global R&D center in Shanghai and the expansion of our R&D facility in Hong Kong. We are willing to invest more in a joint laboratory based on the GaN process with UAES to jointly promote the development and application of GaN process technology in the Chinese market and support our growth in the global automotive sector."

     United Automotive Electronics Co., Ltd. said: "We are pleased to work with Nexperia, a leading semiconductor company in automotive applications, to develop innovative solutions for new energy vehicle power systems based on GaN processes. This will help us reduce the number of components used in our products, reduce costs, increase power density and improve overall system reliability and efficiency."