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Nexperia introduces a new 120v / 4a half-bridge grid driver

Nov 20 2024 2024-11 Power Nexperia
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Nexperia launched a new set of high-performance gate driver integrated circuits intended for controlling both high-side and low-side N-channel MOSFETs in synchronous buck or half-bridge configurations. These devices provide substantial current output and superior dynamic performance, enhancing efficiency and durability in applications.

     Nexperia has introduced a new suite of high-performance gate driver integrated circuits for controlling high - and low-side n-channel MOSFETs in synchronous buck or half-bridge configurations. These devices provide a large number of current outputs and excellent dynamic performance, increasing efficiency and durability in applications. The automotive certified NGD4300-Q100 is suitable for electronic power steering and power converters, while the NGD4300 is suitable for DC-DC converters in consumer devices, servers, telecommunications equipment and micro-inverters in a variety of industrial applications.

 

     Floating high-side drivers in these ics are capable of operating at bus voltages up to 120v. It uses a boot power supply that includes integrated diodes, simplifying the overall system design and helping to reduce the PCB size. The device is capable of delivering 4 a peak source current and 5 an absorbed current, ensuring minimal rise and fall times even under high load conditions.

 

     The gate driver has a low latency of 13 ns and provides a special channel-to-channel delay matching with only 1 ns variation. The observed delay is greatly reduced compared to similar competing gate drivers, thus helping to minimize dead time by optimizing the switching duty cycle. The rise time is 4 ns, while the typical fall time is 3.5 ns, which helps to improve efficiency, facilitate high-frequency operation and fast system control. Gate drivers are designed to accept input control signals that conform to TTL and CMOS logic levels.

 

     These integrated circuits are manufactured using a silicon on Insulator (SOI) process to ensure enhanced power conversion and robustness for motor drive applications. The HS pin's negative voltage tolerance is extended to -5 V, which greatly reduces the risk of damage to system parasitic components and unexpected voltage spikes. The NGD4300 and NGD4300-Q100 are available in ddn-8, SO-8, and HSO-8 packages, giving engineers the flexibility to balance device size and thermal performance according to specific application requirements.

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