
Nexperia has announced a new line of high-pressure gallium nitride field-effect tubes using a new generation of H2 technology. The new device is available in two packages, TO-247 and Nexperia's proprietary CCPAK. Both achieve better switching and on-off performance with better stability. Due to the cascaded structure and optimized device parameters, Nexperia gallium nitride Fets do not require complex drive and control, and the application design is greatly simplified. They can also be easily driven using standard silicon MOSFET drivers.
The new gallium nitride technology uses a through-hole through the epitaxial layer, reducing defects and reducing the chip size by approximately 24%. The new device in the TO-247 package, the on-resistance RDS(on) is reduced TO only 41mΩ (maximum, typical value of 35 Mω at 25 ° C), while having a high gate threshold voltage and a low reverse on-voltage. The new device in the CCPAK package further reduces the current-on resistance to 39 Mω (maximum, typical value of 33 Mω at 25 ° C). The new devices in both packages are AEC-Q101 compliant and meet the requirements of automotive applications.
Dilder Chowdhury, Director of Strategic Marketing for Gallium Nitride at Nexperia, said: "Customers need new 650V devices with on-resistance RDS(on) of 30 to 40 mω in order to achieve cost-effective, high-power conversion. Related applications include on-board chargers for electric vehicles, high-voltage DC-DC converters and engine traction inverters; And 1.5~5kW titanium grade industrial power supplies, such as: rack-mounted telecommunications equipment, 5G equipment and data center related equipment. Nexperia continues to invest in gallium nitride development and expands its product portfolio with new technologies. We started with traditional TO-247 packaged devices and bare chips for power module manufacturers, followed by our high-performance CCPAK patch packaged devices."
Nexperia's CCPAK patch package uses an innovative copper clip package technology to replace the internal package lead. This reduces parasitic losses, optimizes electrical and thermal performance, and improves reliability. CCPAK packaged gallium nitride devices are available in either top or bottom heat dissipation configurations, making them more versatile and helping to further improve heat dissipation.
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