Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

Nexperia introduces a new high pressure gallium nitride field effect tube with a new generation of H2 technology

Nov 11 2020 2020-11 Passive Components Nexperia
Article Cover
Nexperia has announced a new line of high-pressure gallium nitride field-effect tubes using a new generation of H2 technology. The new device is available in two packages, TO-247 and Nexperia's proprietary CCPAK. Both achieve better switching and on-off performance with better stability. Due to the cascaded structure and optimized device parameters, Nexperia gallium nitride Fets do not require complex drive and control, and the application design is greatly simplified. They can also be easily driven using standard silicon MOSFET drivers.

     Nexperia has announced a new line of high-pressure gallium nitride field-effect tubes using a new generation of H2 technology. The new device is available in two packages, TO-247 and Nexperia's proprietary CCPAK. Both achieve better switching and on-off performance with better stability. Due to the cascaded structure and optimized device parameters, Nexperia gallium nitride Fets do not require complex drive and control, and the application design is greatly simplified. They can also be easily driven using standard silicon MOSFET drivers.

 

     The new gallium nitride technology uses a through-hole through the epitaxial layer, reducing defects and reducing the chip size by approximately 24%. The new device in the TO-247 package, the on-resistance RDS(on) is reduced TO only 41mΩ (maximum, typical value of 35 Mω at 25 ° C), while having a high gate threshold voltage and a low reverse on-voltage. The new device in the CCPAK package further reduces the current-on resistance to 39 Mω (maximum, typical value of 33 Mω at 25 ° C). The new devices in both packages are AEC-Q101 compliant and meet the requirements of automotive applications.

 

     Dilder Chowdhury, Director of Strategic Marketing for Gallium Nitride at Nexperia, said: "Customers need new 650V devices with on-resistance RDS(on) of 30 to 40 mω in order to achieve cost-effective, high-power conversion. Related applications include on-board chargers for electric vehicles, high-voltage DC-DC converters and engine traction inverters; And 1.5~5kW titanium grade industrial power supplies, such as: rack-mounted telecommunications equipment, 5G equipment and data center related equipment. Nexperia continues to invest in gallium nitride development and expands its product portfolio with new technologies. We started with traditional TO-247 packaged devices and bare chips for power module manufacturers, followed by our high-performance CCPAK patch packaged devices."

 

     Nexperia's CCPAK patch package uses an innovative copper clip package technology to replace the internal package lead. This reduces parasitic losses, optimizes electrical and thermal performance, and improves reliability. CCPAK packaged gallium nitride devices are available in either top or bottom heat dissipation configurations, making them more versatile and helping to further improve heat dissipation.

The Products You May Be Interested In

AIUR-09-561K AIUR-09-561K FIXED IND 560UH 490MA 1.9 OHM TH 312

More on Order

ASPI-8040S-221M-T ASPI-8040S-221M-T FIXED IND 220UH 800MA 599 MOHM 240

More on Order

AMPMDFD-8.1920T3 AMPMDFD-8.1920T3 MEMS OSC XO 8.1920MHZ CMOS SMD 326

More on Order

AMPMGDC-10.0000T AMPMGDC-10.0000T MEMS OSC XO 10.0000MHZ CMOS SMD 332

More on Order

AMPMEDD-4.0960 AMPMEDD-4.0960 MEMS OSC XO 4.0960MHZ CMOS SMD 143

More on Order

AMPMGDB-44.0000 AMPMGDB-44.0000 MEMS OSC XO 44.0000MHZ CMOS SMD 328

More on Order

AOCJY2A-12.800MHZ-F AOCJY2A-12.800MHZ-F XTAL OSC VCOCXO 12.8000MHZ CMOS 357

More on Order

ABLNO-V-100.000MHZ ABLNO-V-100.000MHZ XTAL OSC VCXO 100.0000MHZ LVCMOS 357

More on Order

AX7DCF4-1152.0000T AX7DCF4-1152.0000T XTAL OSC XO 1.1520GHZ LVDS SMD 496

More on Order

AX5DBF1-1216.0000C AX5DBF1-1216.0000C OSC XO 1.216GHZ 2.5V LVDS 380

More on Order

AX7MCF1-709.5260T AX7MCF1-709.5260T XTAL OSC XO 709.5260MHZ CML SMD 401

More on Order

AX7MCF1-693.4800T AX7MCF1-693.4800T XTAL OSC XO 693.4800MHZ CML SMD 446

More on Order

AX7DAF1-775.0693T AX7DAF1-775.0693T XTAL OSC XO 775.0693MHZ LVDS SMD 315

More on Order

AX5PBF1-705.8000C AX5PBF1-705.8000C OSC XO 705.8MHZ 2.5V LVPECL 448

More on Order

AX7PBF1-540.8000C AX7PBF1-540.8000C XTAL OSC XO 540.8000MHZ LVPECL 424

More on Order

AX7PAF2-580.0000C AX7PAF2-580.0000C XTAL OSC XO 580.0000MHZ LVPECL 493

More on Order

AX5MAF1-655.3600C AX5MAF1-655.3600C OSC XO 655.36MHZ 3.3V CML 438

More on Order

AX5MCF3-420.0000T AX5MCF3-420.0000T OSC XO 420MHZ 1.8V CML 111

More on Order

ASTMHTE-32.000MHZ-AC-E-T ASTMHTE-32.000MHZ-AC-E-T MEMS OSC XO 32.0000MHZ LVCMOS 469

More on Order

ASE-32.000MHZ-LR-T ASE-32.000MHZ-LR-T XTAL OSC XO 32.0000MHZ CMOS SMD 403

More on Order

ABM8W-18.4320MHZ-4-J1Z-T3 ABM8W-18.4320MHZ-4-J1Z-T3 CRYSTAL 18.4320MHZ 4PF SMD 246

More on Order

ABM8W-13.8240MHZ-4-J2Z-T3 ABM8W-13.8240MHZ-4-J2Z-T3 CRYSTAL 13.8240MHZ 4PF SMD 464

More on Order

ABM8W-21.9487MHZ-8-B1U-T3 ABM8W-21.9487MHZ-8-B1U-T3 CRYSTAL 21.9487MHZ 8PF SMD 317

More on Order

ABM10W-19.6800MHZ-8-J2Z-T3 ABM10W-19.6800MHZ-8-J2Z-T3 CRYSTAL 19.6800MHZ 8PF SMD 436

More on Order