Nexperia introduces a new silicon germanide (SiGe) rectifier that combines best-in-class efficiency and thermal stability

     Nexperia has introduced a new range of silicon germanide (SiGe) rectifieds with reverse voltages of 120 V, 150 V and 200 V, combining the high efficiency of Schottky rectifieds with the thermal stability of fast-recovery diodes.

     The new 1-3 A SiGe rectifier is targeted at the automotive, communications infrastructure and server markets and is particularly suitable for high temperature applications, such as LED lighting, engine control units or fuel injection. These newly introduced extremely low leakage devices provide extended safe working areas where thermal runaway does not occur at up to 175 °C. At the same time, engineers can also use fast recovery diodes for high temperature designs to optimize the design for higher efficiency. SiGe rectifiers increase low forward voltage (Vf) and low Qrr, reducing conduction losses by 10-20%.

     The PMEG SiGe device (PMEGxGxELR/P) comes in industry-standard, space-saving, thermally efficient CFP3 and CFP5 packages. The package uses solid copper clips to reduce thermal resistance and optimize heat transfer to the surrounding environment, making the PCB smaller and more compact. In addition, pin-to-pin replacement of Schottky and fast recovery diodes can be easily achieved using SiGe technology.

     Jan Fischer, Nexperia Product Manager, commented: "Using Nexperia's innovative silicon germanide technology gives engineers more options to design power circuits and ultimately build market-leading products than ever before. SiGe is the perfect complement to Nexperia's power diode offering, which comes in a clip-glued FlatPower (CFP) package and includes more than 100 Schottky rectifiers and fast recovery rectifiers. In addition, we will continue to expand our product portfolio and always provide our customers with the right products for their applications."