Nexperia introduces high-efficiency gallium nitride power devices with industry-leading performance

     Nexperia announces its entry into the gallium nitride field-effect tube (GaN) market with the launch of the 650V power device, the GAN063-650WSA. The device is extremely durable, with a gate voltage (VGS) of +/ -20 V and an operating temperature range of -55 to +175 °C. The GAN063-650WSA is characterized by low on-resistance (maximum RDS(on) is only 60 mΩ) and fast switching; It's very efficient.

     Nexperia gallium nitride devices are targeted at application markets with high performance requirements, including electric vehicles, data centers, telecommunications equipment, industrial automation and high-end power supplies. Nexperia silicon-based gallium nitride uses a very reliable and durable process and is a proven technology for quality and reliability. In addition, it can use existing silicon wafer processing equipment, so the scalability of wafer processing capacity is very strong. In addition, the device is packaged in the industry-standard TO-247 package, so customers can benefit from superior gallium nitride performance in a familiar package.

     Toni Versluijs, General Manager of Nexperia's MOS Business unit, said: "This is Nexperia's strategy to enter the high-voltage sector, and now we can deliver power semiconductor technology suitable for electric vehicle applications. Our gallium nitride technology is already in mass production and can be scaled up flexibly. The automotive industry is a key focus for Nexperia, and electric vehicles are expected to experience significant growth over the next two decades as they gradually replace traditional internal combustion engine vehicles as the preferred choice for personal and public mobility."