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Nexperia introduces the lowest on-impedance encapsulated MOSFETs in history

Aug 22 2019 2019-08 Power Nexperia
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Nexperia, a global leader in discrete, logic and MOSFET devices, today announced that it has implemented the NextPower S3 MOSFET with the lowest on-impedance in history using Trench 11 technology, without affecting other important parameters. Examples include drain current (ID(max)), safe working area (SOA), or gate charge QG.

     Nexperia, a global leader in discrete, logic and MOSFET devices, today announced that it has implemented the NextPower S3 MOSFET with the lowest on-impedance in history using Trench 11 technology, without affecting other important parameters. Examples include drain current (ID(max)), safe working area (SOA), or gate charge QG.

 

     Many applications require ultra-low on-impedance, such as ORing, hot-swap operations, synchronous rectification, motor control, and battery protection, to reduce I²R losses and increase efficiency. However, some similar devices with similar on-impedance require derating of their SOA(performance for evaluating MOSFET tolerance) and maximum ID current ratings due to reduced wafer cell spacing.

 

     Nexperia's PSMNR58-30YLH MOSFETs have a maximum on-impedance of just 0.67 ohms and a maximum rated drain current of 380A. This parameter is particularly important for motor control applications, because the moment the motor is blocked, it can produce a large surge, and the MOSFET must be able to withstand these surges to ensure safe and reliable operation. Some competitors offer only the maximum calculated ID current, but ANSI products have measured sustained current capabilities up to 380 amps, and 100 percent of final production tests have sustained current values up to 190 amps.

 

     The device is available in LFPAK56 (Power-SO8) and LFPAK33 (Power33) packages, both of which feature a unique copper clip structure that absorbs thermal stress for improved quality and reliability. The PSMNR58-30YLH in the LFPAK56 package (ANSI Semiconductor's 4-pin Power-SO8 package) has a mounting size of only 30 square mm and a pin spacing of 1.27 mm.

 

     Steven Waterhouse, Product Manager for Power MOSFET at Nexperia, said: "By combining its unique NextPowerS3 superjunction technology with the LFPAK package, ASCH offers a MOSFET with low on-impedance and high rated ID maximum current without compromising its SOA class, quality and reliability. This enables the new components to fully meet the needs of applications requiring high performance, high reliability and high fault tolerance." These include brushless direct current (BLDC) motor control (full bridge three-phase topology); ORing Server power, hot swap operations and synchronous rectification; Battery protection; Mobile phone fast charging and DC load switch.

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