Nexperia partnered with Ricardo to develop a GAN-based EV inverter design

     Nexperia, a production specialist in discrete devices, MOSFETs, GaN FETs, and analog and logic devices, has announced a partnership with Ricardo, a leading automotive engineering consulting firm, to develop a technology demonstrator for EV inverters based on gallium nitride (GaN) technology.

     GaN is the preferred power device for these applications because GaN FETs enable systems to achieve higher efficiency, better thermal performance, and simpler switching topologies at a lower cost. In the automotive world, that means longer driving range, which is a major concern for all EV consumers. Now GaN is poised to replace silicon-based IGBT and SiC as the technology of choice for traction inverters used in plug-in hybrid or pure electric vehicles.

     Nexperia introduced a series of AEC-Q101-certified GaN FETs last year, providing automotive designers with proven, reliable devices and an expanding portfolio in this highly efficient technology to deliver the power density required for powertrain electrification. Ricardo is well regarded in the automotive industry, where the global engineering innovation company provides design and consulting services for concepts in the automotive industry, including the production of technology prototypes and demonstrators, and works with well-known leading brands such as McLaren and Bugatti. Ricardo is the ideal partner for Nexperia on this project.

     Michael LeGoff, general manager of Nexperia GaN FET Devices, said: "By using GaN FET devices for inverter design and experimenting with inverters by Ricardo, we were able to better understand how to drive a vehicle safely and reliably. We are developing a practical solution and believe that many automotive designers are interested in learning about this solution and discovering the advantages of this solution."

     Adrian Greaney, Director of Technology and Products at Ricardo, said: "Semiconductor technology is key to the efficiency of inverter systems and plays an important role in the performance and efficiency of electric vehicles. Gallium nitride can significantly improve switching speed and efficiency, and can be regarded as a driving technology. In addition to increasing mileage, it also helps to reduce the package size of the inverter and reduce weight, which provides greater flexibility in powertrain design and helps to reduce vehicle weight. "From a system level, there are many advantages to this design, and Ricardo is excited to be working with Nexperia on GaN FETs."