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Nexperia's 650 V SiC diode portfolio is now available for automotive and broader industrial applications

Jun 17 2024 2024-06 Passive Components Nexperia
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Nexperia announced that its best-in-class 650 V, 10 A silicon carbide (SiC) Schottky diode is now automotive compliant (PSC1065H-Q) and in a true two-pin (R2P) DPAK (TO-252-2) package for a variety of applications in electric vehicles and other vehicles. In addition, TO further expand its SiC diode portfolio, Nexperia now offers industrial-grade devices rated at 6 A, 16 A and 20 A in TO-220-2, TO-247-2 and D2PAK-2 packages for increased design flexibility.

     Nexperia announced that its best-in-class 650 V, 10 A silicon carbide (SiC) Schottky diode is now automotive compliant (PSC1065H-Q) and in a true two-pin (R2P) DPAK (TO-252-2) package for a variety of applications in electric vehicles and other vehicles. In addition, TO further expand its SiC diode portfolio, Nexperia now offers industrial-grade devices rated at 6 A, 16 A and 20 A in TO-220-2, TO-247-2 and D2PAK-2 packages for increased design flexibility. These diodes address the challenges of applications requiring high voltages and currents, including switching power supplies, AC-DC and DC-DC converters, battery charging infrastructure, motor drivers, uninterruptible power supplies, and photovoltaic inverters for sustainable energy production.

 

     These devices feature a combined PiN Schottky (MPS) structure that offers many advantages over similar competing SiC diodes, including excellent inrush current resistance. This eliminates the need for additional protection circuits, significantly reduces system complexity, and enables hardware designers to achieve greater efficiency in a smaller form factor in durable, high-power applications. Nexperia's consistent quality across a variety of semiconductor technologies gives designers confidence in the reliability of these diodes.

 

     In addition, Nexperia's "thin SiC" technology provides a thinner substrate (one-third of its original thickness), greatly reducing the thermal resistance from the junction to the backing metal. This results in a number of benefits, including lower operating temperatures, higher reliability, longer equipment life, greater resistance to inrush current, and lower forward voltage drop.

 

     Katrin Feurle, Senior Director and Head of SiC Diodes and FET Product Group at Nexperia, said: "The market response to the first release of SiC diodes has been overwhelming. They have already proven their strength in design, with power supplies for industrial applications being a very compelling example where customers have achieved particularly good results. The excellent reverse recovery performance of these diodes means that they will be more efficient in practical use. We are very pleased to introduce our first automotive standards-compliant product, which has been recognized by major automotive manufacturers for its performance and reliability."

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