ON Semiconductor Announces New 650 V Silicon Carbide (SiC) MOSFETs

     ON Semiconductor, driving energy efficiency innovations, has released a new family of silicon carbide (SiC) MOSFET devices for demanding applications where power density, energy efficiency and reliability are critical. Designers replace existing silicon switching technology with new SiC devices that will be used in applications such as electric vehicle (EV) on-board chargers (OBC), solar inverters, server power supplies (PSU), telecom and uninterruptible power supplies (UPS) achieve significantly better performance in .

     ON Semiconductor's new automotive-qualified AECQ101 and industrial-qualified 650-volt (V) SiC MOSFETs are based on a new wide-bandgap material that provides superior switching performance and better thermal performance than silicon, thereby improving system-level performance Energy efficiency, power density, and reduction of electromagnetic interference (EMI), system size and weight.

     The new generation of SiC MOSFETs uses a novel active cell design combined with advanced thin wafer technology to achieve best-in-class figure of merit Rsp (Rdson * area) at 650 V breakdown voltage. The NVBG015N065SC1, NTBG015N065SC1, NVH4L015N065SC1 and NTH4L015N065SC1 are available in D2PAK7L and To247 packages with the lowest Rdson (12 mOhm) in the market. This technology also optimizes the energy loss figure of merit, thereby optimizing performance in automotive and industrial applications. The built-in gate resistor (Rg) provides designers with more flexibility without artificially slowing down the device with external gate resistors. Higher surge, avalanche capability, and short-circuit robustness all contribute to enhanced durability, resulting in higher reliability and longer device life.

     "In modern power applications such as electric vehicle (EV) on-board chargers (OBC) and other applications such as renewable energy, enterprise computing and telecommunications, High energy efficiency, reliability and power density are constant challenges for designers. These new SiC MOSFETs significantly improve performance over equivalent silicon switching technologies, allowing engineers to meet these challenging design goals. The enhanced performance reduces losses, thereby Improve energy efficiency, reduce thermal management needs, and reduce electromagnetic interference (EMI). The end result of using these new SiC MOSFETs is a smaller, lighter, more efficient and more reliable power supply scheme.”