ON Semiconductor has released an upgraded power module to support the development of solar power generation and storage

     ON Semiconductor introduces the latest generation of silicon and silicon Carbide hybrid Power Integrated modules (PIM) in the F5BP package, ideal for increasing the power of large solar cluster inverters or energy storage systems (ESS). Compared to previous generations, these modules offer higher power density and efficiency at the same size, increasing the total system power of solar inverters from 300 kW to 350 kW. This means that a large solar farm with an installed capacity of 1,000 megawatts using the latest generation of modules can achieve nearly two megawatts of energy savings per hour, equivalent to powering more than 700 homes per year. In addition, a smaller number of modules are required to achieve the same power as previous generation products, reducing the component cost of power devices by more than 25%.

     With the lowest levelised cost of energy (LCOE), solar power is increasingly becoming the first choice for renewable energy generation worldwide. To compensate for the instability of solar power, utility operators are also adding large battery energy storage systems (BESS) to ensure a stable supply of energy from the grid. To support this combination of systems, manufacturers and utilities need solutions that can provide the most efficient and reliable power conversion. 0.1 Each percent increase in efficiency results in annual operating cost savings of $250,000 per gigawatt of installed capacity.

     "As a volatile energy source that relies on sunlight, we need to continuously improve system efficiency and reliability and adopt advanced energy storage solutions to ensure the stability and reliability of the global grid during peak and off-peak power demand periods." Sravan Vanaparthy, vice president of Industrial Power at On's Power Solutions business group, said, "More efficient infrastructure will promote adoption and ensure that as more solar power facilities are built, less energy is wasted, and we continue to move forward on our path away from fossil fuels."

     The F5BP-PIM integrates 1050V FS7 IGBT and 1200V D3 EliteSiC diodes to achieve high voltage and high current conversion while reducing power consumption and improving reliability. The FS7 IGBT has low turn-off losses, reducing switching losses by up to 8%, while the EliteSiC diodes provide superior switching performance, with a 15% reduction in on-voltage drop (VF) compared to previous generations.

     These PIMs incorporate an innovative Type I midpoint clamp (INPC) topology inverter module and a boost module that flies across the capacitor topology. The modules also use an optimized electrical layout and advanced direct copper bonding (DBC) substrate to reduce stray inductance and thermal resistance. In addition, the copper substrate further reduces the thermal resistance to the heat sink by 9.3%, ensuring that the module remains cool under heavy loads. This thermal management is essential for maintaining the efficiency and service life of the module, making it very effective in demanding applications that require reliable and continuous power supply.