ON Semiconductor introduces new 650 V Silicon Carbide (SiC) MOSFETs

     ON Semiconductor, driving energy efficiency innovation, announces a new line of silicon carbide (SiC) MOSFETs for demanding applications where power density, energy efficiency and reliability are critical. Designers replacing existing silicon switching technology with new SiC devices will enable significantly better performance in applications such as electric vehicle (EV) on-board chargers (OBCs), solar inverters, server power supplies (Psus), telecommunications and uninterruptible power supplies (UPS).

     ON Semiconductor's new vehicle specification AECQ101 and industrial-grade qualified 650 volt (V) SiC MOSFETs are based on a new wide-band gap material that offers superior switching performance and better thermal performance than silicon, resulting in improved system-level energy efficiency, power density, and reduced electromagnetic interference (EMI), system size, and weight.

     The new generation of SiC MOSFETs uses a novel active cell design combined with advanced thin wafer technology to achieve best-in-class quality factor Rsp (Rdson * area) at 650 V breakdown voltage. NVBG015N065SC1, NTBG015N065SC1, NVH4L015N065SC1 and NTH4L015N065SC1 are available in D2PAK7L and To247 packages with the lowest Rdson (12 mOhm) on the market. The technology also optimizes the energy loss quality factor, which optimizes performance in automotive and industrial applications. Built-in gate resistors (RGS) provide designers with greater flexibility without the need to artificially slow down devices using external electrode resistors. Higher surge, avalanche capability, and short-circuit robustness all contribute to increased durability, providing greater reliability and longer device life.

     Asif Jakwani, Senior Vice President, Advanced Power Division, ON Semiconductor, said: "In modern power applications, such as electric vehicle (EV) on-board chargers (OBCs) and other applications such as renewable energy, enterprise computing and telecommunications, high energy efficiency, reliability and power density are always challenges for designers. These new SiC MOSFETs significantly improve performance over equivalent silicon switching technologies, enabling engineers to meet these challenging design goals. Enhanced performance reduces losses, resulting in improved energy efficiency, reduced thermal management needs, and reduced electromagnetic interference (EMI). The end result of using these new SiC MOSFETs is a smaller, lighter, more efficient and more reliable power solution."