ON Semiconductor introduces new 900 V and 1200 V silicon carbide MOSFETs

     ON Semiconductor expands its Wide band Gap (WBG) device family with the introduction of two more silicon carbide (SiC) MOSFETs. These new devices are suitable for a variety of demanding high-growth applications, including solar inverters, electric vehicle (EV) on-board charging, uninterruptible power supplies (UPS), server power supplies, and EV charging stations, providing a level of performance that is simply not possible with silicon (Si) MOSFETs.

     ON Semiconductor's new 1200 volt (V) and 900 V N-channel SiC MOSFETs offer faster switching performance and greater reliability than silicon. The fast intrinsic diode has a low reverse recovery charge, significantly reduces losses, and increases the operating frequency as well as the power density of the overall scheme.

     The small chip size further enhances high-frequency operation to achieve smaller device capacitance and lower gate charge-QG (down to 220 nC), which reduces switching losses when operating at high frequencies. These enhancements increase energy efficiency, reduce electromagnetic interference (EMI), and enable the use of fewer (or smaller) passive devices than SI-based MOSFETs. Extremely robust SiC MOSFETs offer higher surge ratings, better avalanche capability, and increased short-circuit resistance than Si devices, providing increased reliability and longer service life, which is critical for demanding modern power applications.

     The lower forward voltage provides threshold free on-state characteristics, reducing static loss during device on-state. 1200 V devices are rated for up to 103 A (maximum ID), while 900 V devices are rated for up to 118 A. For applications requiring higher currents, MOSFETs from ON Semiconductor can be easily operated in parallel due to their positive temperature coefficient/independent of temperature.

     Gary Straker, vice president/general manager, Power MOSFET Division, On Semiconductor Power Solutions, said of the new SiC MOSFET devices: "If design engineers are to meet the challenging energy efficiency and power density targets demanded by modern renewable energy, automotive, IT and telecommunications applications, they need high-performance, highly reliable MOSFETs. On Semiconductor's WBG SiC MOSFETs boost performance beyond what silicon devices can offer, including lower losses, higher operating temperatures, faster switching speeds, improved EMI and increased reliability. To further support the engineering community, On Semiconductor also offers a wide range of resources and tools to simplify and accelerate the design process."

     All of ON Semiconductor's SiC MOSFETs are lead - and halogen-free, and the devices for automotive applications comply with AEC-Q100 vehicle regulations and the Production Parts Approval Process (PPAP). All devices are available in industry-standard TO-247 or D2PAK packages.