ON Semiconductor offers the next generation 1200 V EliteSiC M3S devices

     Onsemi introduces the latest generation of 1200 V EliteSiC Silicon Carbide (SiC) M3S devices to help power electronics engineers achieve better energy efficiency and lower system costs. The new product family includes EliteSiC MOSFETs and modules that help increase switching speeds for the growing number of 800 V electric vehicle (EV) on-board chargers (OBC) and electric vehicle DC fast charging, solar solutions, and energy storage energy infrastructure applications.

     The portfolio also includes a new EliteSiC M3S device with a half-bridge Power Integration module (PIMs) with industry-leading ultra-low Rds (on) in a standard F2 package. These modules are ideal for industrial applications in the DC-AC, AC-DC and DC-DC high-power conversion stages. They offer higher integration with an optimized direct bonded copper design for balanced current sharing and heat distribution between parallel switches. These PIMs are designed to provide high power density for use in energy infrastructure, DC fast charging for electric vehicles, and uninterruptible power supplies (UPS).

     Asif Jakwani, senior vice president and general manager of the Advanced Power Division at Onsemi, said: "ON's latest generation of automotive and industrial EliteSiC M3S products will help designers reduce their application footprint and reduce system cooling requirements. This helps designers develop high power converters that are more energy efficient and power dense."

     Car class 1200 V EliteSiC MOSFETs are designed for high power OBC up to 22 kW and high voltage to low voltage DC-DC converters. M3S technology has been developed specifically for high-speed switching applications and has a leading switching loss quality factor.