ON introduces hybrid IGBT based on SiC and related isolated high current IGBT gate drivers

     ON Semiconductor introduces new Silicon carbon-based (SiC) hybrid IGBT and related isolated high-current IGBT gate drivers. AFGHL50T65SQDC Uses the latest field cutoff IGBT and SiC Schottky diode technologies to provide low on-off and switching losses for a wide range of power applications, including those that will benefit from lower reverse recovery losses, such as totem pill-based bridgeless power factor correction (PFC) and inverters.

     The device co-packages a silicon-based IGBT with a SiC Schottky barrier diode, providing an excellent trade-off between the lower performance of a silicon-based scheme and the higher cost of an entirely SiC based scheme. The high performance device is rated at 650 V and is capable of handling continuous currents up to 100 A@25 °C (50 A@100 °C) and pulsed currents up to 200 A. For systems that require greater current capacity, a positive temperature coefficient makes parallel work easier.

     Modern electric vehicle applications not only use energy to drive, but in some cases also store energy in order to power homes at peak times. This requires a two-way charger that must have a high switching efficiency to ensure that no energy is wasted during conversion. In this case, IGBTs with integrated external SiC diodes offer higher energy efficiency than MOSFET solutions because there are no associated forward or reverse recovery losses.

     AFGHL50T65SQDC operates at junction temperatures up to 175 °C for the most demanding power applications, including automotive. It is fully AEC-Q 101 certified, further proving its suitability for electric vehicle (EV) and hybrid vehicle (HEV) on-board chargers.

     In addition to the new hybrid IGBT, ON Semiconductor will introduce and demonstrate a new line of isolated high-current IGBT drivers at PCIM. The NCD(V)57000 series targets a variety of power applications, including solar inverters, motor drives, uninterruptible power systems (UPS) and automotive applications such as powertrains and PTC heaters.

     The NCD(V)57000 series is a high-current single-channel IGBT driver with a built-in Galvani safety isolation design to provide energy-efficient operation in power applications requiring high reliability. The device features complementary inputs, open drain faults and output readiness, active Miller clamping, precise undervoltage lock (UVLO), soft shutdown desaturation (DESAT) protection, negative gate voltage pins, and separate high and low drive outputs to provide flexibility in system design.

     The device's galvanic isolation rating is greater than 5 kVrms, meeting UL 1577 requirements, operating voltages greater than 1200 V, and guaranteed 8 mm creepage distance (input > Output) to meet enhanced security isolation requirements. The NCD(V)57000 device offers 7.8A drive current and 7.1A draw current capability, more than three times that of some competing devices. What's more, they also have greater current capability when operating in the Miller flat region, while combined with their advanced protection features, making them the best IGBT drivers in their class.