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Omron introduces MOSFET relay module with T-circuit structure

Sep 1 2020 2020-09 Connectors Omron Electronics Inc-EMC Div
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Omron has announced its new MOS FET (metal-oxide-semiconductor field-effect transistor, a type of field-effect transistor) relay module "G3VM-21MT", which will be the world's first electronic component to adopt a "T-circuit structure" (a circuit structure commonly used in electronic devices such as attenuators to minimize leakage current).

     Omron has announced its new MOS FET (metal-oxide-semiconductor field-effect transistor, a type of field-effect transistor) relay module "G3VM-21MT", which will be the world's first electronic component to adopt a "T-circuit structure" (a circuit structure commonly used in electronic devices such as attenuators to minimize leakage current). The T-circuit structure consists of small, long-life solid-state relays that output signals without physical contact, and the relay module minimizes the leakage current (a state inside the circuit where current leaks through the insulation) that has long existed in semiconductor test equipment. The G3VM-21MT enables high precision measurement and improves the production efficiency of electronic components.

 

     The G3VM-21MT is capable of switching measurement signals in test equipment primarily used for electrical testing of semiconductor devices. In addition to the small size and long life of the MOS FET relay, the G3VM-21MT is the world's first MOS-FET relay module with a "T-circuit structure", which is composed of three MOS-FET relays, while ensuring high precision measurement and reducing the maintenance frequency of test equipment. Helps to minimize leakage current without affecting the detection accuracy of the test equipment.

 

     In the digital era where the functions of electronic components are diversified and the production scale continues to expand, the performance requirements of semiconductor test equipment are getting higher and higher. Mechanical reed relays (two reeds with contacts in a glass tube are switched on and off by the magnetic flux of a coil wrapped around the glass tube) Components used in semiconductor test equipment for high-precision measurements have extremely low leakage currents, but they need to be replaced regularly, possibly several times a month, because contact wear can affect measurement accuracy. This maintenance work can greatly affect production efficiency, so the adoption of solid-state relays has been expected as the life of solid-state relays has been extended. Up to now, MOS-FET relays are not suitable for accurate electrical tests and test equipment with high reliability requirements due to their technical difficulty in reducing leakage current.

 

     To meet these needs, Omron has successfully commercialized relay module products with a "T-circuit structure" using electronic component technology developed over many years, and has significantly reduced leakage current of less than or equal to 1pA (trillionth of an ampere). The challenge of reducing leakage current in solid-state relays as close to zero as possible eliminates leakage current problems and improves the reliability of test equipment. In addition, by integrating long-life MOS FET relays into the relay module, maintenance downtime can be reduced, which has been a long-term challenge for mechanical relays.

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