On Semiconductor has introduced two new silicon carbide MOSFETs

     On Semiconductor has introduced two new silicon carbide (SiC) MOSFETs. The industrial grade NTHL080N120SC1 and the automotive grade NVHL080N120SC1 compliant with AEC-Q101 bring wide band-gap technology capabilities and broad performance benefits to important high-growth end-use applications such as automotive DC-DC, EV on-board charters, solar, uninterruptible power supplies and server power supplies.

     This marks the expansion of On Semiconductor's comprehensive and growing SiC ecosystem, which includes complementary devices such as SiC diodes and SiC drivers, as well as important design resources such as device simulation tools, SPICE models, and application information to help design and systems engineers meet the development challenges of high-frequency circuits.

     On Semiconductor's 1200 volt (V), 80 milliohm (mΩ), SiC MOSFETs are robust and meet the needs of modern high-frequency designs. They combine the advantages of high power density and high energy efficiency to significantly reduce operating costs and overall system size due to the smaller footprint of the device. These features require less thermal management, further reducing bill of material (BoM) costs, size and weight.

     Key features and associated design benefits of the new device include best-in-class low leakage current, fast intrinsic diodes with low reverse recovery charge, resulting in significantly lower power consumption, support for higher frequency operation and higher power density, low on-off loss (Eon) and on-off loss (Eoff)/Fast on-off and off-off combined with low forward voltage to reduce total power consumption, and low on-off performance. Thus reducing heat dissipation requirements. Low capacitance supports the ability to switch at very high frequencies, reducing annoying electromagnetic interference (EMI) issues; At the same time, higher surge and avalanche capabilities and robust short-circuit protection enhance overall robustness, improve reliability and extend overall life expectancy.

     Another unique advantage of On Semiconductor's new SiC MOSFETs is a patented terminal structure that increases reliability and robustness, and enhances operational stability. The NVHL080N120SC1 is designed to withstand high inrush currents and provide high avalanche capacity and strong short-circuit protection. Aec-q101-compliant MOSFETs and other SiC devices ensure full use in the growing number of automotive applications due to increasing electronic content and electric powertrains. The maximum operating temperature of 175 ° C is suitable for automotive design and other target applications where high density and space constraints push up typical ambient temperatures.

     Commenting On the introduction of the new SiC MOSFETs and the overall enhancement of the company's wide bandgap ecosystem, Gary Straker, vice president and general manager of On Semiconductor's Power MOSFET Division, said, "The most important applications and current megatends increasingly demand the full range of performance beyond conventional silicon devices. "On Semiconductor's comprehensive SiC portfolio is enhanced by the introduction of these two new MOSFETs and supported by an ecosystem of tools and resources that not only provide a complete wide band gap solution, but also guide engineers through the development and import of design processes to achieve the desired functionality, cost-effective, reliable and long service life solutions."