Onsemi Launches the World's First Toll Package 650 V Silicon Carbide MOSFET

     Onsemi released the world's first silicon carbide (SiC) MOSFET packaged with To Readless (TOLL). The transistor meets the rapidly growing demand for high-performance switching devices suitable for high power density design. Until recently, SiC devices were packaged with D2PAK 7-pin, which obviously required more space.

     The size of TOLL package is only 9.90 mm x 11.68 mm, which is 30% less than the PCB area of D2PAK package. Moreover, its shape is only 2.30 mm, which is 60% smaller than the D2PAK package. In addition, onsemi also provides vehicle gauge devices, including TO-247 3-pin, 4-pin and D2PAK 7-pin packages.

     In addition to the smaller size, the TOLL package also provides better thermal performance and lower package inductance (2 nH) than the D2PAK 7 pin. Its Kelvin source configuration can ensure lower gate noise and switching loss – including a 60% reduction in conduction loss (EON) compared with devices without Kelvin configuration, which can significantly improve energy efficiency and power density in challenging power supply design, as well as improve electromagnetic interference (EMI) and make PCB design easier

     Asif Jakwani, senior vice president and general manager of onsemi Advanced Power Division, said: "The design of highly reliable power supply in a small space is becoming a competitive advantage in many fields, including industry, high-performance power supply and server applications. Packaging our best SiC MOSFET in the TOLL package not only reduces space, but also enhances performance in many aspects, such as EMI and loss reduction. Providing highly reliable and robust high-performance switching devices for the market will help power designers solve the problem of strict Power design challenges. "

     SiC devices have obvious advantages over silicon predecessors, including enhanced high-frequency energy efficiency, lower EMI, ability to work at higher temperatures and greater reliability. Ansenmey is the only SiC solution supplier with vertical integration capability, including SiC crystal ball growth, substrate, epitaxy, wafer manufacturing, best in class integration modules and discrete packaging solutions.

     NTBL045N065SC1 is the first SiC MOSFET with Toll package, which is suitable for demanding applications, including switching power supply (SMPS), server and telecom power supply, solar inverter, uninterruptible power supply (UPS) and energy storage. This device is suitable for designs that need to meet the most challenging energy efficiency standards, including ErP and 80 PLUS Titanium energy efficiency standards.

     The VDSS rating of NTBL045N065SC1 is 650 V, the typical RDS (on) is only 33 m Ω, and the maximum power consumption (ID) is 73 A. Based on wide band gap (WBG) SiC technology, the device has a maximum operating temperature of 175 ° C and ultra-low gate charge (QG (tot)=105 nC), which can significantly reduce switching loss. In addition, the TOLL package is designed to ensure humidity sensitivity level 1 (MSL1) to reduce the failure rate in batch production.