Onsemi introduces complete power solutions to improve data center energy efficiency

     As data centers become increasingly power-hungry to meet the massive processing demands of AI computing, improving energy efficiency is critical. The powerful combination of ON's latest generation T10 PowerTrench series and EliteSiC 650V MOSFETs provides a complete solution for data center applications that offers unmatched energy efficiency and superior thermal performance in a smaller package size.

     Engines powered by artificial intelligence consume more than 10 times as much electricity as the average search engine request, with global data center power demand expected to reach about 1,000 terawatt hours (TWh) in less than two years [IEA Power 2024 report]. From the grid to the processor, electricity needs to be converted four times to provide power for the processing of AI requests, which can result in a loss of about 12% of power. By using the T10 PowerTrench series and the EliteSiC 650V solution, the data center was able to reduce power losses by approximately 1%. If implemented in data centers around the world, this solution could reduce energy consumption by approximately 10 terawatt hours per year, equivalent to providing annual electricity consumption for nearly one million homes per year [according to the U.S. Energy Information Administration's annual household electricity consumption data].

     The EliteSiC 650V MOSFETs offer superior switching performance and lower device capacitance for higher efficiency in data centers and energy storage systems. Compared to previous generation products, the new generation of silicon carbide (SiC) MOSFETs have half the gate charge and reduce the energy stored in both output capacitance (Eoss) and output charge (Qoss) by 44%. Compared to Super Junction (SJ) MOSFETs, they have no trailing current when turned off, superior performance at high temperatures, and significantly reduce switching losses. This allows customers to reduce the size of the system components while increasing the operating frequency, resulting in an overall reduction in system costs.

     In addition, the T10 PowerTrench series is designed to handle the high currents critical to the DC-DC power conversion stage, providing higher power density and superior thermal performance in a compact package size. This is achieved through a shielded gate trench design with an ultra-low gate charge and on-resistance RDS (on) of less than 1 milliohm. In addition, the soft recovery diode and lower Qrr effectively reduce ringing, overshoot and electrical noise, thus ensuring optimal performance, reliability and robustness under pressure. The T10 PowerTrench series also meets the exacting standards required for automotive applications.

     "Artificial intelligence and electrification are reshaping our world and causing electricity demand to soar. Accelerating innovation in power semiconductors to improve energy efficiency is key to realizing these technology megatrends, and that's how ON is responsibly empowering the future." Simon Keeton, President of ON's Power Solutions division, said, "Our latest solution significantly reduces power loss during energy conversion and will positively impact the demand for the next generation of data centers.