Onsemi introduces the latest 7th generation 1200V QDual3 IGBT power module

     Onsemi has announced the 7th generation 1200V QDual3 insulated gate bipolar transistor (IGBT) power module, which offers a higher power density and 10% higher output power compared to other products in its class. The 800 amps (A) QDual3 module is based on the new Field Cut-off 7th Generation (FS7) IGBT technology, delivering industry-leading energy efficiency performance that helps reduce system costs and simplify design. When applied to a 150 kW inverter, the QDual3 module loses 200 watts (W) less than the closest competitor in its class, greatly reducing the size of the radiator. The QDual3 module is designed to operate in harsh conditions and is ideal for use in high-power converters such as central inverters for solar power plants, energy storage systems (ESS), commercial agricultural vehicles (CAVs) and industrial motor drives. At present, there are two products to choose from according to different application requirements - NXH800H120L7QDSG and SNXH800H120L7QDSG.

     As renewable energy adoption continues to increase, so does the need for solutions such as peak demand management and continuous power supply assurance. In order to maintain the stability of the grid and reduce costs, it is necessary to reduce the consumption of electricity during peak hours of electricity demand, that is, to cut peak and fill valley. With the QDual3 module, manufacturers can design solar inverters and energy storage systems with stronger power generation and storage capacity at the same system size, improve energy management efficiency, enhance storage capacity, and thus more smoothly connect solar power to the grid. In addition, the module also supports the storage of excess power in the energy storage system, which can effectively alleviate the intermittency problem of solar power generation and ensure the reliability and stability of power supply. For large system applications, these modules can be connected in parallel to increase the output power to several megawatts. Compared to traditional 600A module solutions, the 800A QDual3 module significantly reduces the number of modules required, greatly simplifying design complexity and reducing system costs.

     The QDual3 IGBT module comes in an 800 A half-bridge configuration, integrates new 7th generation trench field cutoff IGBT and diode technology, and uses ON's advanced packaging technology to reduce switching and on-off losses. Thanks to FS7 technology, the strip size is reduced by 30%, and each module can accommodate more strips, resulting in increased power density and A maximum current capacity of 800 A or more. The 800 A QDual3 module has an IGBT Vce (sat) as low as 1.75V (175 ° C), a low Eoff and a 10% lower energy loss than the nearest alternative. In addition, the QDual3 module meets the stringent standards required for automotive applications.

     "As commercial fleets such as trucks and buses become more electrified, and the demand for renewable energy increases, there is a need for solutions that can generate, store and distribute electricity more efficiently. Delivering renewable energy to the grid, storage systems and downstream loads with the lowest possible power loss is becoming increasingly critical." Sravan Vanaparthy, vice president of Industrial Power at On's Power Solutions Business Group, said, "The QDual3 offers excellent energy efficiency with an industry-standard pin arrangement, providing power electronics designers with a plug-and-play solution that instantly improves system performance."