Power Integrations Launches Automotive IGBT/SiC Module Driver Product Series

     Power Integrations announced the launch of SCALETM EV series gate driver board for Infineon EconoDUALTM modules. The new drive is also applicable to original, imitation and other new derivative modules using SiC. Its applications include electric vehicles, hybrid and fuel cell vehicles (including buses and trucks), high-power vehicles and traction inverters for construction, mining and agricultural equipment.

     The SCALE EV board level gate driver is internally integrated with two enhanced gate drive channels, related power supply and monitoring and telemetry circuits. The new drive board has passed the vehicle level certification and ASIL B certification, which can realize the design of ASIL C traction inverter. The first SCALE EV series member released is 2SP0215F2Q0C, which is specially designed for EconoDUAL 900A 1200V IGBT half bridge module.

     Peter Vaughan, Director of Automotive Business Development of Power Integrations, said: "The design of gate pole driver is critical to the performance and reliability of electric vehicles. This new product we launched has been developed, tested and verified, as well as ASIL certification, which will significantly reduce the time and cost of system development."

     The innovative new driver IC has a very high degree of integration, which can make the size of the entire driver board (including gate power supply) completely suitable for the power module, while still providing the spacing required for reinforced insulation in accordance with the IEC 60664 standard. ASIC package can provide 11.4mm creepage distance and electrical clearance, which can safely meet the requirements of 800V automobile system voltage. The input and output circuits of the system microcontroller are connected through two independent on-board connectors to meet the functional safety requirements. Each channel only needs an independent 5V power supply, and other required isolated output voltages will be generated on the circuit board.

     SCALE EV gate driver product series has 1200V rated withstand voltage, which is applicable to 400V and 800V systems, and supports silicon carbide (SiC) MOSFET and silicon based IGBT switches. It is designed to meet the requirements of 5500 meters above sea level, and provides three proofing service options to meet the technical cleanliness requirements. The new product has obvious advantages in design and perfect protection measures. It integrates active short circuit, active discharge of connected DC bus capacitance, over-voltage limitation through active gate control, gate monitoring, signal transmission monitoring, temperature monitoring in the chip and other diagnostic functions. The short circuit and over-current response time for SiC MOSFET switches is less than 1 microsecond, while the short circuit and over-current response time for IGBT switches is less than 3 microseconds.