Power Integrations introduces 1700V Gallium nitride switching IC, setting a new benchmark in gallium nitride technology

     Power Integrations, a well-known company in the field of energy-efficient power conversion for high-voltage integrated circuits, introduces the new member of the InnoMux™-2 family of single-stage, independently tuned multioutput offline power ics. The new device is manufactured using the company's proprietary PowiGaN™ technology and is the industry's first, 1700V gallium nitride switching IC.

     The 1700V voltage rating further advances the state of the art in gallium nitride Power devices, following the industry-first 900V and 1250V devices introduced by Power Integrations in 2023. The 1700V InnoMux-2 IC easily supports 1000VDC input voltage ratings in flyback designs and achieves efficiencies of more than 90% in applications that require one, two or three supply voltages. The adjustment accuracy of each output is controlled within 1%, without the need for a post-stage regulator, and the system efficiency is further improved by about 10%. In power applications such as car chargers, solar inverters, three-phase meters and various industrial power systems, this new device can replace expensive silicon carbide (SiC) transistors.

     Radu Barsan, Vice President of Technology at Power Integrations, said: "We have rapidly advanced the development of gallium nitride products, achieving three world-first rated voltage levels in less than two years: 900V, 1250V and now 1700V. Our new InnoMux-2 IC integrates 1700V gallium nitride technology with three other recent innovations: independent, precise multiplex output tuning; FluxLink™ Secondary Side Control (SSR) digital isolation communication technology; And Zero voltage switching (ZVS) technology without active clamping that virtually eliminates switching losses."

     Ezgi Dogmus, Market Activity Manager, Compound Semiconductor Division, Yole Group, said: "To our knowledge, the 1700V rated withstand voltage is significantly higher than any other commercially available GAN HEMT (High electron mobility transistor). By the end of 2029, the power gallium nitride device market will reach $2 billion and will expand to various application areas, with more attractive cost advantages compared to silicon carbide devices."