Power Integrations launched a car -grade QSPEED silicon diode with extremely low QRR and suitable for high -efficiency high -efficiency switching speed

     Power Integrations announced the launch of the 600V 12A QSPEED diode, which has the industry's lowest reverse recovery charge (QRR) characteristics among the silicon diode. At 25 ° C, the QRR is only 14nc. The diode can improve the efficiency of the PFC -level of the vehicle charger, which can significantly reduce the temperature rise of the PFC MOSFET. The QH12TZ600Q certified by AEC-Q101 has the same low switch loss performance as the silicon carbide (SIC) device, but it does not have the disadvantage of increasing cost increases because of expensive technology.

     Power Integrations Advanced Product Marketing Manager Edward Ong said: "These new QSPEED diode QRRs are half of the super super fast silicon diode, which can achieve very high system efficiency. The application of car carrier chargers is particularly important, and it can replace SIC devices for QSPEED diode. "

     QH12TZ600Q uses a hybrid Pin-Schottky diode technology to achieve high performance. Its smooth reverse recovery current conversion characteristics not only improve the efficiency, but also reduce the EMI and peak reverse voltage stress. It is not necessary to use a buffer circuit when the output rectifier is used in the vehicle charger. The new device uses a compact 2.5KV isolation to-220 packaging, which can be directly installed on the metal heat sink, which is conducive to achieving excellent temperature rise performance.