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Power Integrations launches gate driver

Jun 14 2019 2019-06 Power Power Integrations
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Power Integrations introduces the SIC1182K SCALE-iDriver, a commercially available high-efficiency, single-channel silicon carbide (SiC) MOSFET gate driver that delivers maximum peak output gate current without the need for an external push stage.

     Power Integrations introduces the SIC1182K SCALE-iDriver, a commercially available high-efficiency, single-channel silicon carbide (SiC) MOSFET gate driver that delivers maximum peak output gate current without the need for an external push stage. The new product can be configured to support different gate drive voltages to meet the needs of commercially available SiC-MOSFET; Its main applications include uninterruptible power supplies (UPS), photovoltaic systems, servo drivers, welders and power supplies.

 

     The SIC1182K offers an 8 A drive at 125°C junction temperature, thus enabling SiC-MOSFET inverter designs with output power up to several hundred kilowatts without the use of a push stage. This will increase the efficiency of the system, and customers can complete a single design to cover the entire product lineup of inverters with different power ratings. Switching frequencies up to 150 kHz support a wide range of applications.

 

     The SCALE-iDriver SIC1182K SiC gate driver uses Power Integrations' high-speed FluxLink™ communication technology for significantly enhanced insulation. FluxLink is an innovative signal transmission technology that replaces optocouplers and capacitive or silicon-based solutions, significantly increasing reliability and providing 1200 V reinforced insulation.

 

     The SCALE-iDriver device also integrates a number of protection features critical to the system, such as desaturation monitoring and current detection readout, primary and secondary undervoltage protection (UVLO), and advanced Active clamp (AAC). In addition, the protection circuit can also provide a safe shutdown in 5 microseconds to meet the rapid protection needs of SiC devices. The SIC1182K SiC gate driver also has strong external magnetic field immunity, its package can provide ≥9.5 mm creepage distance and electrical gap, and the material used meets the highest CTI level of IEC60112 standard - CTI600.

 

     Michael Hornkamp, Senior Marketing Director of Gate Driver products at Power Integrations, said: "Silicon carbide MOSFET technology opens the door to reducing size and weight, and also reducing losses on the power system. "The SCALE-iDriver product family uses FluxLink™ technology to design cost-effective inverters with very few peripheral components and safe performance, ensuring functional safety, smaller package size and higher efficiency."

 

     SCALE-iDriver technology can significantly reduce the number of peripheral components required and reduce BOM costs; There is no need to use tantalum capacitors or electrolytic capacitors, only a secondary winding is required. Dual-layer PCBS can be used to further simplify design, reduce the number of components and simplify supply chain management.

 

     Power Integrations' SCALE-iDriver SIC1182K SiC gate drivers comply with the IEC60664-1 insulation fit standard for low-voltage equipment up to 1000 V and the IEC61800-5-1 motor drive frequency converter standard. The new device is about to be certified to UL 1577 safety standard 5 kVAC transient insulation withstand voltage class in 1 minute, and VDE0884-10 certification is in progress.

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