Power Integrations has announced a deal to purchase the assets of Odyssey Semiconductor Technologies, a company that specializes in the development of vertical gallium-nitride (GaN) transistor technology. The deal is anticipated to be finalized in July 2024, at which point all essential Odyssey workers are scheduled to become part of Power Integrations’ technical group.
The acquisition aligns with the company’s continuous development plan for its exclusive PowiGaN™ technology, which is utilized in various product lines such as InnoSwitch™ ICs, HiperPFS™-5 power-factor-correction ICs, and the newly introduced InnoMux™-2 family of single-stage, multiple-output ICs. In 2023, the company unveiled PowiGaN technology and products with voltage options of 900 and 1,250 volts.
Power Integrations has been leading the way in the development and commercialization of GaN technology since the introduction of the first PowiGaN products in 2018, according to the company. Currently, they are implementing an ambitious plan that aims to achieve cost parity with silicon MOSFETs and enhance the voltage and power capabilities of PowiGaN.
Power Integrations aims to bring a cost-effective GaN technology to the market that can handle high currents and voltages. This technology will be able to support higher-power applications, which are now supplied by silicon carbide (SiC). GaN offers material advantages over SiC, such as better performance and cheaper costs. The expertise of the Odyssey team in high-current vertical GaN will enhance and expedite these endeavors.
Odyssey affirms the acquisition by Power Integrations will accelerate their GaN technology roadmap. Power Integrations, being the pioneer in commercializing high-voltage GaN, remains at the forefront of advancing the technology in terms of cost, voltage, and current. Additionally, the firm excels in designing system-level products that fully utilize the possibilities of GaN.
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