On Semiconductor, a driver of energy efficient innovation, has introduced new power modules that deliver superior energy efficiency, reliability and performance in a highly integrated and compact package, adding to the company's already strong lineup of power semiconductor devices.
The power stage in applications such as solar inverters, uninterruptible power supply (UPS) inverter stages, and industrial variable frequency drivers (VFDS) typically consists of discrete IGBTs/MOSFETs integrated with dedicated drivers and additional discrete devices. On Semiconductor's new NXH160T120L2Q1SG and NXH160T120L2Q2F2SG Power Integration Modules (PIM) offer a compact, highly integrated solution in an easy-to-mount package that saves space and reduces costs, greatly alleviates designers' challenges.
Available in Q1 and Q2 packages for 30 KW and 50 KW inverters, these devices integrate field cutoff gulted IGBTs and fast recovery diodes, providing lower on-off and on-off losses and enabling designers to compromise between low VCE(SAT) and low EON/EOFF losses to fully optimize circuit performance. Direct bonded copper (DBC) substrates support high currents to minimize the effects of parasitic inductors, allowing designers to achieve high switching speeds and an isolation voltage of 3000 Vrms at a creepage distance of 12.7 mm.
In addition, On Semiconductor introduced a new, fully optimized, ultra-compact smart power stage (SPS) multi-chip module, the FDMF3170, for use in DC-DC buck converters in servers, data centers, artificial intelligence accelerators, and telecommunications equipment. It integrates two high-performance power MOSFETs based on On Semiconductor PowerTrench technology, and a smart driver with a high-precision current sensor for optimal processor performance.
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