Qorvo Launches 1200V Fourth Generation SiC FET with Outstanding Quality Factor in the Industry

     Qorvo announced the launch of a new generation of 1200V silicon carbide (SiC) field effect transistor (FET) series, which have outstanding performance characterization in the industry in terms of on resistance. The new UF4C/SC series 1200V fourth generation SiC FET is very suitable for the mainstream 800V bus structure, which is commonly used in electric vehicle vehicle charger, industrial battery charger, industrial power supply, DC solar inverter, welding machine, uninterruptible power supply and induction heating applications

     Anup Bhalla, chief engineer of United SiC (Qorvo) power devices, said: "The fourth generation products with high performance have expanded our 1200V product series, allowing us to better serve engineers who have increased the bus design voltage to 800V. In electric vehicles, this voltage increase is unavoidable, and these new devices have four different RDS (on) levels, which helps designers to choose the most suitable SiC products for each design."

     All RDS (on) products (23, 30, 53 and 70 mOhms) are packaged with industry standard 4-pin Kelvin source TO-247, providing cleaner switches at a higher performance level. The 53 and 70 mOhm devices are also TO-247 3-pin packages. This series of parts achieves excellent reliability on the basis of properly controlled thermal performance, which is the result of advanced silver sintered crystal grain connection method and advanced wafer thinning process.

     FET Jet CalculatorTM is a free online design tool that includes all 1200V SiC FETs. It can immediately evaluate the energy efficiency, component loss and junction temperature rise of devices used in various AC/DC and isolated/non isolated DC converter topologies. It can compare single components and parallel components under user specified heat dissipation conditions to obtain the optimal solution.