Qorvo introduces 1200V SiC modules in a compact E1B package

     Qorvo, the world's leading provider of connectivity and power solutions, has announced the launch of four 1200V silicon carbide (SiC) modules in a compact E1B package, two in half-bridge configurations and two in full-bridge configurations with a minimum on-resistance RDS(on) of 9.4mΩ. The new high-efficiency SiC modules are ideal for applications such as electric vehicle charging stations, energy storage, industrial power and solar energy.

     Ramanan Natarajan, Marketing Director, Qorvo SiC Power Product Line, said: "Modules in this new family can replace up to four discrete SiC FETs, simplifying thermal mechanical design and assembly. Our common source common gate technology also enables operation at higher switching frequencies, further reducing the size of the solution by using smaller external components. The high efficiency of these modules simplifies the power supply design process, allowing our customers to focus on the design, layout, assembly, characterization and certification of a single module rather than dealing with multiple discrete components."

     The four SiC modules, represented by UHB100SC12E1BC3N with 9.4mΩ on-resistance, all feature Qorvo's unique common-source, common-gate configuration, which minimizes on-resistance and switching losses, resulting in significant efficiency gains, especially in soft switching applications. In addition, the silver sintered chip mounting reduces the thermal resistance to 0.23°C/W; Combined with the laminated chip architecture in product models with "SC", its power cycle performance is 2 times higher than that of similar SiC power modules in the market. Thanks to these features, these highly integrated SiC power modules are not only easy to use, but also offer excellent thermal performance, high power density and high reliability.