Qorvo introduces D2PAK packaged SiC FETs to enhance 750V electric vehicle design performance

     Qorvo announces an automotive compliant Silicon Carbide (SiC) field-effect transistor (FET) product; Industry-leading 9mΩ on-resistance RDS(on) in the compact D2PAK-7L package. The 750V SiC FETs, the first product in Qorvo's new pin-compatible SiC FETs, offer a current resistance of up to 60mΩ and are ideal for electric vehicle (EV) applications such as on-board chargers, DC/DC converters and positive temperature coefficient (PTC) heater modules.

     The UJ4SC075009B7S has a typical on-going resistance of 9mΩ at 25°C to reduce conduction losses and maximize efficiency in high-voltage, multi-kilowatt vehicle-mounted applications. Its small surface mount package automates assembly processes and reduces manufacturing costs for customers. The new 750V series complements Qorvo's existing 1200V and 1700V D2PAK packaged SiC FETs for vehicles, creating a complete portfolio to meet the needs of 400V and 800V battery architecture EV applications.

     Ramanan Natarajan, Marketing Director of Qorvo's Power Line, said: "The launch of this new SiC FET series demonstrates our commitment to provide electric vehicle powertrain designers with advanced, efficient solutions to their unique vehicle power challenges."

     These fourth-generation SiC FETs use Qorvo's unique common-source, common-gate circuit configuration to combine SiC JFETs with silicon-based MOSFETs to create devices that offer the efficiency benefits of wide-band switching technology and simple gate drivers for silicon-based MOSFETs. The efficiency of SiC FETs depends on the conduction loss. Thanks to the industry's superior low on-resistance and body diode reverse voltage drop, Qorvo's common source common gate structure/JFET mode results in lower conduction losses.