Qorvo, a leading provider of RF solutions for mobile, infrastructure and aerospace and defense applications, announced the launch of a compact three-chip power solution for phased array radars. The three-chip solution provides configurable GaN offset point automatic calibration, enabling engineers to maximize system performance across different GaN power amplifiers (PA) without changing the board design.
Qorvo's new chipset optimizes one of the largest and most expensive components in phased array systems: the pulse energy storage capacitor. The solution uses an innovative architecture that reduces capacity by 90% and system size by 30%, while reducing weight and operating costs.
"This complete radar power solution integrates Qorvo's advanced technology, combining an innovative power conversion architecture, best-in-class GaN RF power amplifiers, and highly efficient and reliable silicon carbide FETs," said Philip Chesley, president of Qorvo Infrastructure and Defense Products.
The new three-chip solution includes the following:
• The ACT43950 is a high voltage constant-current capacitor charging controller that works with Qorvo's silicon carbide power switches to provide fully programmable output voltage and current, enabling customers to maximize system performance. The voltage regulator architecture is integrated with subsequent phases to minimize the energy storage capacitor requirements.
• ACT43850 is an RF Point of Load (RFPoL) step-down DC-DC power converter that takes the ACT43950 output and reduces it to a stable voltage optimized for Qorvo GaN power amplifiers. Its advanced configuration options enable RF system designers to minimize noise and electromagnetic interference, thereby maximizing the performance of radar arrays.
• The ACT43750 is a highly integrated drain switch and negative grid regulator PMIC for ultra-fast RF GaN power amplifier drain switching. By automatically performing grid voltage bias sequencing, automatic calibration, and dynamic bias recalibration, Qorvo simplifies system manufacturing while reducing the impact of device aging and temperature on RF performance.
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