Qorvo releases new leadless Surface Mount (TOLL) packaging technology

     Qorvo announced that it will be demonstrating a new leadless surface Mount (TOLL) packaging technology that delivers high performance as evidenced by the 750V SiC FET's 5.4 (mΩ) on-off impedance, the lowest in the world. It is also the first product in Qorvo's 750V SiC FETs product TOLL package, with on-resistance ranges from 5.4 mΩ to 60 mΩ. These devices are ideal for applications where space is extremely limited, such as AC/DC power from hundreds to tens of watts and solid state relays and circuit breakers up to 100A. Help customers reduce volume size and improve power density.

     In the 600/750V voltage power FETs category, Qorvo 4th generation (Gen 4) SiC FETs products lead the industry in terms of major performance, such as on-resistance and output capacitance. In addition, Qorvo devices have a minimum on-off resistance of 5.4 mΩ in the TOLL package, which is 4 to 10 times lower than the best Si MOSFETs, SiC MOSFETs and GaN transistors in the market today. SiC FETs' 750V voltage rating is also 100-150V higher than some alternative technologies, providing more design margin for switching tube voltage transient spikes in customer product applications.

     Anup Bhalla, Chief Engineer of Qorvo Power Devices Division, said: "With the introduction of our 5.4mΩ Gen4 SiC FeTs in TOLL Packaging, we have taken an important step to provide the industry with the best performance devices and multiple device options, especially for customers in industrial applications who require this flexibility and increased cost effectiveness in their power design portfolio."

     The TOLL package is 30 percent smaller than the D2PAK surface mount and is 2.3mm in height, half the size of comparable products. Despite the reduced size, advanced manufacturing techniques achieve an industry-leading 0.1℃ / W thermal resistance (from junction to shell). The maximum rating of the on-off DC current is 120A, at which time the corresponding shell temperature is 144℃.

     The maximum impulse current can reach 588A within 0.5 ms. Combined with extremely low on-off resistance and excellent transient heat dissipation, Qorvo's 750V TOLL packaged products deliver an "I2t" value approximately eight times higher than Si mosFEts in the same package, helping to improve the robustness and resistance to transient overload of our customers' products while also simplifying design. The TOLL package also offers Kelvin connections for reliable high-speed conversions.

     These 4th generation SiC FeTs utilize Qorvo's unique Cascode circuit architecture (i.e., common source common gate) to encapsulate SiC JFETs together with Si MosFeTs inside a single device, To exploit the high efficiency advantages of wide gap switching technology and the advantages of simplified gate level drive of Si MOSFET.