Asymmetrical regulated output for IGBT, Si, SiC and GaN common-source common-gate drives - Powering IGBT, Si, SiC and GaN common-source common-gate drivers is now easier than ever with the new R24C2T25 DC/DC converter. The SMT device is available in a compact 36-pin SSOP package measuring 7.5 x 12.83 mm, which allows for easy provision of asymmetric dual output voltages and can be programmed via an external resistance network.
One output voltage range can be set to +2.5 to +22.5 VDC, and the other can be set to -2.5 to -22.5 VDC, with a total positive and negative voltage range of 18 to 25 VDC, such as +15/-3 V, to drive the SiC gate efficiently. The voltage is kept within the +/-1.5% range to prevent the risk of overvoltage and damage. The operating temperature is up to 82°C at 2W and 75°C at 2.5W. Even at a maximum temperature of 125°C, the converter can still provide effective derating power.
The R24C2T25 has an isolation voltage of 3 kVAC/1 min, an ultra-low coupling capacitance of 3.5 pF and a common-mode transient immunity of +/-150 V/ns. This makes it ideal for powering high-side gate drivers with fast dV/dt and dI/dt power switch edge rates.
The R24C2T25 provides soft start, input undervoltage and overvoltage lock, thermal shutdown, and output overpower protection. Output overvoltage and undervoltage locking is also provided to ensure that the power device is not affected by invalid gate voltages. At the same time, it provides good power signal and on/off control function, and the product will enter standby mode when the current consumption is less than 700 μA.
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