ROM semiconductor fourth generation n channel silicon carbide power mosfet

ROHM Semiconductor 4th generation N-channel silicon carbide (SiC) power MosFeTs provide low on-off resistance for improved short-circuit tolerance time. The fourth generation silicon carbide mosfet is easy to parallel and simple to drive. Mosfets feature fast switching speed/reverse recovery, low switching loss and a maximum operating temperature of +175°C. ROHM's fourth generation N-channel SSiC power mosfet supports 15V gate source voltage, helping to save equipment power.

Features

● Low on-resistance with improving short-circuit ruggedness
● Minimizes switching loss by drastically reducing parasitic capacitance
● Supports 15V Gate-Source voltage, improving application design freedom
● Fast switching speed
● Fast reverse recovery
● Easy to parallel
● Simple to drive
● Silicon Carbide (SiC) technology
● N-Channel transistor polarity
● Single-channel
● Through-hole mounting
● Enhancement mode
● +175°C maximum operating temperature
● AEC-Q101-qualified options available
● Lead-free, RoHS and REACH compliant

Applications

● Automobile
● Switch mode power supplies
● Solar inverters
● DC/DC converters
● Induction heating
● Motor drives

Specifications

● 3 to 7 pins
● -4V to +21V gate-source voltage range, 4.8V threshold
● 63nC to 170nC gate-charge range
● 26A to 105A continuous drain current range
● 13mΩ to 62mΩ on-drain source resistance
● 750V or 1.2kV Drain source breakdown voltage
● 11ns to 57ns rise time
● 9.6ns to 21ns fall time
● Typical delay time
-   4.4ns to 20ns turn-on range
-   22ns to 83ns turn-off range
● 93W to 312W power dissipation range
● Available packages
-   TO-247-4L
-   TO-247N-3
-   TO-263-7L