Renesas Electronics introduces new RF amplifiers for 4G/5G infrastructure systems

     Renesas Electronics has announced a further expansion of its robust RF amplifier product line with the introduction of the F1490, which delivers a much lower static current (75mA) than competing products. The F1490 is a second-generation high-gain 2-stage RF amplifier that covers the critical sub-6GHz 5G band from 1.8 GHz to 5.0 GHz. The F1490 simplifies device selection for the transmitter link, eliminates gain modules and maintains gain margin, while providing two alternative gain modes for greater flexibility, lower power consumption and greater performance in system design.

     Naveen Yanduru, vice president, RF Communications, Industry & Communications, Renesas Electronics, said: "The high gain of the F1490 with selectable modes and ultra-low power consumption, while maintaining high OP1dB performance and a 2.4dB noise figure, meets all system-level requirements required by customers in their 5G massive MIMO pre-driver amplifiers." We are excited to continue to drive innovation in LTE and 5G with Renesas amplifier solutions for AAS, 4G/5G base stations and other wireless communication devices."

     Designed to operate in the 1.8GHz and 5.0GHz frequency ranges, the F1490 RF amplifier features high gain, high linearity and high bandwidth, making it ideal for FDD and TDD sub-6 GHZ 5G applications. The F1490's pin-to-pin compatibility with current devices also reduces the cost of design updates.