Renesas expands its RF portfolio to cover the entire signal chain of Acer base stations

Renesas Electronics, a global semiconductor solutions provider, has introduced four new high-reliability, high-performance products to strengthen its legacy Macro Base station (BTS) RF portfolio and bring customers a complete RF signal chain solution. The expansion includes the industry's first four-channel F4482/1 TX Variable Gain amplifier (VGA) and the F011x series dual-channel first-stage low noise amplifier (LNA). The new family also includes the F1471 RF driver amplifier, the first high-power front driver with a P1dB greater than 1/2W, and the F2934 RF switch in a smaller package with higher isolation for DPD feedback paths.

The expanded portfolio delivers the high performance, high reliability, flexibility and small form factor required for 5G macro base station systems, with superior performance across a wide range of environmental conditions and frequency bandwidth. The new product integrates Renesas Smart SiliconTM innovation and can be implemented in a smaller package - a unique advantage for multi-antenna systems.

Naveen Yanduru, vice president of RF Communications, Industry and Communications at Renesas Electronics, said: "As the 5G transition accelerates, we have upgraded the receive and transmit chain components of our Acer base portfolio to provide greater performance and greater integration. We are excited to continue introducing new leading-edge circuit designs and to enable the complete RF signal chain with new products to enable customers to be 5G-compatible as they bring their next generation of macro station systems to market."

Acer customers can combine these new products with the recently announced F1490 high-gain RF amplifier and the highly integrated F0443 RX VGA to build a complete RF signal chain solution.

The expanded macro base station portfolio includes:

● Highly integrated F4482/1 quad-channel TX VGA

○ RF frequency range: 400MHz to 2800MHz

○ Barron, low-pass filters, amplifiers and digital stepping attenuators integrated on a single chip

○ Renesas Zero DistortionTM technology improves service quality and dynamic range. Glitch-FreeTM technology protects PA components and simplifies DPD design

● Dual channel F011x first stage LNA (Balanced LNA or Dual Channel LNA)

○ The RF frequency ranges from 650MHz to 2700MHz

○ Low noise factor of 0.55dB and low return loss (-27dB input, -23dB output) at 2600MHz

● High linearity F1471 RF drive amplifier

○ RF frequency range is 400MHz to 4200MHz, gain 17dB

○ OIP3 is as high as 38dBm, and the OP1dB is 28.5dBm at 2600MHz

○ Adjustable OIP3 performance and DC bias for tuning flexibility

● High reliability SP2T F2934 RF switch

○ RF frequency range is 50MHz to 6000MHz

○ Higher isolation (70dB at 1GHz and 2GHz, 74dB at 3GHz, 67dB at 4GHz), using a small 3x3 QFN package, to solve the problem of PCB space limitations

○ Renesas KzTM Constant impedance technology keeps VSWR constant during switching
Renesas' strong innovation in circuit design meets the evolving needs of the wireless infrastructure market. Renesas proprietary RF solutions with unique technical differences meet the needs of a wide range of applications, including massiveMIMO and millimeter wave cell base stations, communication systems, microwave (RF/IF), CATV, and test and measurement equipment.