SCALE-iDriver for SiC MOSFETs is AEC-Q100 automotive grade certified

     A leading company in the field of gate driver technology for medium and high voltage inverter applications has announced that its high-efficiency single-channel gate driver SIC118xKQ SCALE-iDriver for silicon carbide (SiC) MOSFETs is now AEC-Q100 automotive certified. The new devices are configured to support the gate drive voltage requirements of common SiC MOSFETs with advanced safety and protection features.

     The SIC1182KQ (1200V) and SIC1181KQ (750V) SCALE-iDriver devices drive SiC MOSFETs in automotive applications. The new products feature rail-to-rail outputs, fast gate switching speeds, single-pole supply voltages that support positive and negative output voltages, integrated power and voltage management, and enhanced insulation. Important safety features include drain-source (VDS) monitoring, current detection readout, primary and secondary undervoltage protection (UVLO), current limiting gate drive, and advanced Active clamp (AAC) to ensure safe operation and soft shutdown in case of failure. The combination of AAC and VDS monitoring ensures a safe shutdown time of less than 2µs in the event of a short circuit. Gate drive control and AAC features minimize gate resistance, which helps reduce switching losses and improve inverter efficiency.

     The new device combines the control and safety features of SCALE-iDriver with its high-speed FluxLink™ communication technology, and Power Integrations revolutionizes gate driver IC technology compared to the use of optocouplers or capacitive couplers or magnetic couplers. This combination greatly improves insulation and enables safe, reliable and cost-effective inverter designs up to 300kW with minimal external components.

     Michael Hornkamp, Senior Marketing Director of Automotive Gate Drive Products at Power Integrations, said: "Silicon carbide MOSFET technology opens the door to more lightweight and compact automotive inverter systems. The switching speed and operating frequency are continuously improved; Our low gate resistance values are used to maintain high switching efficiency, while our fast short-circuit response provides timely protection in the event of a failure."

     "In addition, SCALE-iDriver sets a new standard for functional safety in terms of insulation strength; Even if a power device causes a serious drive failure, the insulation properties of the SCALE-iDriver remain intact, ensuring that no part of the case is exposed to life-threatening high voltage." Hornkamp added.

     The new single-channel SIC118xKQ gate driver delivers up to 8A output current and is suitable for SiC MOSFETs with standard gate-emitter voltages as low as +15V and negative voltage ranges from -3V to -15V. The new device has strong external magnetic field immunity, a compact eSOP package that provides ≥9.5mm creepage distance and electrical gap, and the materials used meet the highest CTI class (CTI = 600 according to IEC 60112).