ST Semiconductor launched a new MDmesh MOSFET to improve power density and energy efficiency

     STPOWER MDmesh M9 and DM9 silicon based N-channel super junction multi drain power MOSFET transistors of ST Semiconductor are very suitable for the design of switching mode power supply (SMPS) for data center servers, 5G infrastructure, and flat panel TVs.

     The first two devices on the market are 650V STP65N045M9 and 600V STP60N043DM9. The on resistance per unit area (RDS (on)) of both products is very low, which can greatly improve the power density and help reduce the system size. The maximum on resistance (RDS (on) max) of the two products are at the leading level in the same category, with STP65N045M9 being 45m Ω and STP60N043DM9 being 43m Ω. Because the gate charge (Qg) is very low, it is usually 80nC at 400V drain voltage. Both devices have the first-class RDS (on) max x Qg quality factor (FoM) in the current market. STST

     The typical value of the gate threshold voltage (VGS (th)) of STP65N045M9 is 3.7V, and the typical value of STP60N043DM9 is 4.0V. Compared with the previous generation MDmesh M5 and M6/DM6, it can greatly reduce the on-off switch loss. The reverse recovery charge (Qrr) and reverse recovery time (trr) of MDmesh M9 and DM9 series are also very low, which helps to further improve energy efficiency and switching performance.

     Another feature of the latest high-voltage MDmesh technology of STF Semiconductor is the addition of a platinum diffusion process to ensure fast switching speed of the intrinsic diode. The peak recovery slope (dv/dt) of the diode is higher than that of the early process. All MDmesh DM9 products have very high robustness, and can withstand up to 120V/ns dv/dt slope at 400V voltage.