ST introduced 40V STripFET F8 MOSFET transistor, which has better energy saving and noise reduction characteristics

     The ST 40V MOSFET transistors STL320N4LF8 and STL325N4LF8AG reduce on-going resistance and switching losses while optimizing the characteristics of the body parasitic diode to reduce energy consumption and noise in power conversion, motor control and distribution circuits.

     The new 40V N-channel enhanced MOSFET uses the latest generation STPOWER STripFET F8 oxide filled channel technology to achieve excellent quality factor. When the gate source voltage (VGS) is 10V, the maximum on resistance (Rds (on)) of STL320N4LF8 and STL325N4LF8AG are 0.8 milliohms and 0.75 milliohms respectively. The resistance per unit area (Rds (on)) of the new MOSFET is very low, so the space saving and high thermal efficiency PowerFLAT 5x6 package can be used.

     ST's advanced STripFET F8 technology has excellent switching speed. Low chip capacitance can minimize gate leakage charge and other dynamic parameters, and improve system energy efficiency. Designers can select the switching frequency in the range of 600kHz to 1MHz, allow the use of smaller capacitors and magnetic components, save circuit size and bill of materials costs, and improve the power density of terminal applications.

     Proper output capacitance and related equivalent series resistance can prevent leakage source voltage from peaking and ensure shorter sudden drop oscillation time when the tube is turned off. With this and the soft recovery characteristics of the body diode, the electromagnetic interference (EMI) emitted by STL320N4LF8 and STL325N4LF8AG is lower than other similar devices on the market. In addition, the reverse recovery charge of the bulk parasitic diode is very small, which can minimize the energy loss of the hard switching topology.

     The gate threshold voltage (VGS (th)) is strictly controlled in STL320N4LF8 and STL325N4LF8AG to ensure that the threshold voltage difference between devices is very small, so that multiple MOSFET power transistors can be paralleled to handle larger current. The short circuit withstand capability is also excellent, which can withstand the current up to 1000A (the pulse is shorter than 10 µ s). STL320N4LF8 and STL325N4LF8AG are the first STPOWER STripFET F8 MOSFET devices that meet industrial standards and AEC-Q101 automotive standards respectively, and are ideal for battery powered products and computing, telecommunications, lighting and general power conversion applications.