
STMicroelectronics introduces the S-Series 1200V IGBT insulated gate bipolar transistor. When the switching frequency reaches 8kHz, the combined on-off and off-off losses of the new series bipolar devices hit a new low in the market, greatly improving the power conversion efficiency of uninterruptible power supplies, solar power generation, welding machines, industrial motors and other similar equipment.
The new S-Series features the lowest saturation voltage (VCE(sat)) currently available on the 1200V IGBT market, ensuring lower voltage drops and minimal power dissipation, thereby simplifying thermal management systems. In addition, the positive VCE(sat) temperature coefficient, combined with the tight parameter distribution, not only simplifies the parallel design of multiple transistors, but also meets the requirements of higher power applications. Extremely low voltage overshoot and zero off oscillation help power manufacturers use simpler external circuits and fewer external components.
10µs minimum short-circuit withstand time (at initial junction temperature of 150°C), latch-up free operation effect, maximum junction temperature of 175°C, and wide safety working area. A number of advantages reflect the strong durability and reliability of the new product.
Ideal for hard switching topologies with the highest switching frequency of 8kHz, the new S-Series uses a third-generation trench-gate field-stop manufacturing process that complements and complements the M-Series and H-series market layouts of ST's 1200V IGBTs. The M Series and H series products are positioned in the switching power supply market of 20kHz and above, respectively, and together with the new S series, these three series products will be the best choice for commonly used switching frequency power supply manufacturers for advanced, energy-efficient IBGT devices.
The newly released S-Series IGBTs are available in three current ratings of 15A, 25A and 40A in either standard pin or TO-247 extended pin packages. The full range of products comes standard with the latest freewheeling diode, which provides both fast recovery and high recovery softness, ensuring that IGBTs have ultra-low electromagnetic interference and on-off loss.
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