ST semiconductor's two new dual-channel electrically isolated IGBTs and silicon carbide (SiC) MOSFET gate drivers save space and simplify circuit design in high-voltage power conversion and industrial applications.
The IGBT driver STGAP2HD and SiC MOSFET driver STGAP2SICD utilize the latest electrical isolation technology from STMicro Semiconductor in a SO-36W wide-body package that can withstand 6kV transients. In addition, the transient tolerance of ±100V/ns dv/dt prevents spurious conduction under high electrical noise conditions. Both drivers offer gate control signals up to 4A. The dual output pins provide additional gate drive flexibility, allowing for separate adjustment of on and off times. The active Miller clamp prevents the gate from spiking during fast reversing in the half-bridge topology.
Circuit protection features include overheat protection, safe operating watchdogs, and an undervoltage locking (UVLO) mechanism in each channel to prevent the drive from starting in dangerously inefficient mode. According to the technical requirements of SiC MOSFET, STGAP2SICD increases the threshold voltage of UVLO to optimize the energy efficiency of the transistor.
Each device has an iLOCK pin that opens both channels in double-low-side asymmetric half-bridge applications and an interlock protection mechanism that prevents pass-through currents in traditional half-bridge circuits. Both drivers have a voltage rating of 1200V on high voltage rails, an input-to-output propagation time of 75ns, and high precision PWM control.
ST semiconductor's new dual-channel current-isolated gate drivers feature dedicated shut-off and brake pins, as well as standby power-saving pins for target applications including power supplies, motors, frequency converters, welders, and chargers. In addition, the input pins are compatible with a minimum 3.3V TTL and CMOS logic signals to simplify the connection of the drive to the main microcontroller or DSP processor.
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