STMicroelectronics introduces 100V industrial-grade STripFET F8 transistor

     STMicroelectronics STL120N10F8 n-channel 100V power MOSFET has extremely low rare-drain charge (QGD) and on-resistance RDS(on), and the coefficient of merit (FoM) is 40% higher than the previous generation of similar products. The newly launched MOSFET utilizes the advanced technology of STPOWER STripFET F8 of ST and introduces the oxide-filled groove process, which integrates extremely low on-off loss and low grid charge to achieve efficient switching performance. Therefore, the maximum on-off resistance RDS(on) of STL120N10F8 is 4.6mΩ (when VGS = 10V), and the efficient operating frequency reaches 600kHz.

     The STripFET F8 technology also ensures that output capacitance values can reduce drain-source voltage spikes, minimizing charge and discharge energy waste. In addition, the volume leakage diode of this MOSFET has higher softness characteristics. These improvements reduce electromagnetic radiation, simplify compliance testing of the final system, and ensure electromagnetic compatibility (EMC) meets applicable product standards.

     The STL120N10F8 is packaged in a PowerFLAT5x6 package with superior energy efficiency and low electromagnetic radiation to enhance power conversion performance in hard and soft switching topologies. In addition, the product is the first STPOWER 100V STripFET F8 MOSFET to fully meet industrial grade specifications and is ideal for power and converters for motor controls, telecommunications and computer systems, LED and low-voltage lighting, as well as consumer appliances and battery-powered devices.

     Other advantages of the new MosFeTs include the small gate threshold voltage (VGS(th)) difference, which is useful in high-current applications and simplifies the parallel design of multiple power switching tubes. The robustness of the new product is very strong, able to withstand 10µs of 800A short-circuit pulse current impact.