STMicroelectronics introduces a new family of double asymmetric gallium nitride transistors

     Building on the innovative strength of the MasterGaN platform, STMicroelectronics introduces MasterGaN2, the first product in a new family of double asymmetric gallium nitride (GaN) transistors, an integrated GaN solution for soft-switching active clamp fly-back topology.

     The on-resistance (RDS(on) of the two 650V normally off GaN transistors are 150mΩ and 225mΩ, and each transistor integrates an optimized gate drive. 6? 7? 6? 7 actuators, making GaN transistors as easy to use as ordinary silicon devices. By integrating advanced drive capabilities with the inherent performance benefits of GaN, MasterGaN2 further enhances the energy efficiency, small size and lightweight benefits of topological circuits such as active clamp flyback converters.

     The MasterGaN Power System Level Package (SiP) family combines two GaN high electron mobility transistors (HEMTs) and a matching high voltage gate driver in a single package, with all the necessary protection features built in. Designers can easily connect Hall sensors and external devices such as DSPS, FPGas or microcontrollers directly to MasterGaN devices. The input is compatible with 3.3V-15V logic signals, helping to simplify circuit design and bill of materials, allowing the use of smaller boards, and simplifying product installation. This integrated solution helps increase the power density of adapters and fast chargers.

     GaN technology is pushing USB-PD adapters and smartphone chargers toward fast charging. St's MasterGaN devices make these chargers 80 percent smaller and 70 percent lighter, while charging three times faster than regular silicon-based solutions.

     Built-in protection features include high-low side undervoltage lock (UVLO), gate driver interlock, dedicated closing pins, and overheat protection. The 9mm x 9mm x 1mm GQFN is a package optimized for high pressure applications with a creepage distance of more than 2mm between high and low pads.