Semiconductors
Passive Components
Sensors
Power
Optoelectronics
STMicroelectronics' EVLDrive 101-HPD (High Power Density) motor drive reference design integrates a three-phase gate driver, STM32G0 microcontroller and 750W power stage on a circular PCB board with a diameter of only 50 mm. The board's sleep power consumption is very low, less than 1uA, and its compact shape can be directly loaded into devices such as hair dryers, handheld vacuum cleaners, power tools, fans, and can also be easily inserted into the electric drive devices of industrial equipment such as drones, robots, and electric pumps and process automation systems.
The reference design uses ST's robust, compact STDRIVE101 three-phase gate driver, allowing developers the freedom and flexibility to choose a motor control method, for example, by choosing a ladder or field oriented control (FOC), whether to detect rotor position with a sensor. The STDRIVE101 driver chip consists of three half-bridge drives with a pull/fill current of 600 mA and an operating voltage range of 5.5V to 75V, which can meet the drive requirements of any low-voltage motor.
The chip integrates a high-low gate driver regulated power supply and configurable drain-source voltage (Vds) monitoring protection, as well as an external pin for selecting direct high-low gate input or PWM control.developers can use the STM32G0 single-wire debugging (SWD) interface to connect to microcontrollers to exchange data, while supporting direct firmware updates, fixing software bugs, and enabling new features.
The power level of the EVLDRIVE101-HPD reference design uses the STL220N6F7 60V STripFET F7 MOSFET power transistor with a typical Rds(on) on-resistance of 1.2mΩ to maintain drive efficiency and simplify motor plug and play connections. The quick power-on function disconnects the power when the motor is idle, saving power and extending the life of battery-powered devices. The protection features built into the driver chip ensure system safety and energy efficiency, including Vds voltage monitoring of the power level circuit MOSFET power tube, as well as undervoltage lock (UVLO), overheat protection and cross on prevention.
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